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IR2304 数据手册 - Infineon（英飞凌）
制造商:
Infineon（英飞凌）
分类:
FET驱动器
封装:
PDIP-8
Pictures:
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IR2304数据手册
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Data Sheet No. PD60200 revB
Features
• Floating channel designed for bootstrap operation
to +600V. Tolerant to negative transient voltage
dV/dt immune
• Gate drive supply range from 10 to 20V
• Under voltage lockout for both channels
• 3.3V, 5V, and 15V input logic input compatible
•
Cross-conduction prevention logic
• Matched propagation delay for both channels
• Lower di/dt gate driver for better noise immunity
•
Internal 100ns dead-time
•
Output in phase with input
HALF-BRIDGE DRIVER
Product Summary
V
OFFSET
600V max.
I
O
+/-
(min) 60 mA/130 mA
V
OUT
10 - 20V
Delay Matching 50 ns
Internal deadtime 100 ns
t
on/off (typ.) 220/220 ns
IR2304(S) & (PbF)
www.irf.com 1
LIN
HIN
VCC
COM
VB
HO
VS
LO
Vcc
HIN
LIN
up to 600V
TO
LOAD
IR2304
Block Diagram
Package
8 Lead SOIC
8-Lead PDIP
Part
Input
logic
Cross-
conduction
prevention
logic
Dead-Time Ground Pins
2106/2301
COM
21064
HIN/LIN no none
VSS/COM
2108 Internal 540ns COM
21084
HIN/LIN yes
Programmable 0.54~5 µs
VSS/COM
2109/2302 Internal 540ns COM
21094
IN/SD yes
Programmable 0.54~5 µs
VSS/COM
2304
HIN/LIN
yes
Internal 100ns
COM
2106/2301/2108/2109/2302/2304 Feature Comparison
• Available in Lead-Free
Description
The IR2304(S) are a high voltage, high speed
power MOSFET and IGBT driver with inde-
pendent high and low side referenced output
channels. Proprietary HVIC and latch immune
CMOS technologies
enable ruggedized monolithic construction.
The logic input is compatible with standard
CMOS or LSTTL output, down to 3.3V logic.
The output driver features a high pulse cur-
rent buffer stage designed for minimum driver
cross-conduction. The floating channel can be
used to drive an N-channel power MOSFET
or IGBT in the high side configuration which
operates up to 600 volts.
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