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IRF2804 数据手册 - IRF
制造商:
IRF
描述:
HEXFET功率MOSFET HEXFET Power MOSFET
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封装尺寸在P9P10P11
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技术参数、封装参数在P1
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IRF2804数据手册
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IRF2804
IRF2804S
IRF2804L
HEXFET
®
Power MOSFET
V
DSS
= 40V
R
DS(on)
= 2.0mΩ
I
D
= 75A
08/27/03
www.irf.com 1
AUTOMOTIVE MOSFET
HEXFET
®
is a registered trademark of International Rectifier.
Description
Specifically designed for Automotive applications,
this HEXFET
®
Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating . These features com-
bine to make this design an extremely efficient
and reliable device for use in Automotive applica-
tions and a wide variety of other applications.
S
D
G
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
D
2
Pak
IRF2804S
TO-220AB
IRF2804
TO-262
IRF2804L
Absolute Maximum Ratings
Parameter Units
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
A
I
D
@ T
C
= 100°C
Continuous Drain Current, V
GS
@ 10V (See Fig. 9)
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
(Package Limited)
I
DM
Pulsed Drain Current
c
P
D
@T
C
= 25°C
Maximum Power Dissipation W
Linear Derating Factor W/°C
V
GS
Gate-to-Source Voltage V
E
AS
Single Pulse Avalanche Energy (Thermally Limited)
d
mJ
E
AS
(tested)
Sin
g
le Pulse Avalanche Ener
gy
Tested Value
i
I
AR
Avalanche Current
c
A
E
AR
Repetitive Avalanche Ener
gy
h
mJ
T
J
Operating Junction and °C
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Parameter Typ. Max. Units
R
θ
JC
Junction-to-Case ––– 0.45 °C/W
R
θ
CS
Case-to-Sink, Flat, Greased Surface
0.50 –––
R
θ
JA
Junction-to-Ambient ––– 62
R
θ
JA
Junction-to-Ambient (PCB Mount, steady state)
j
––– 40
Max.
280
200
1080
75
10 lbf•in (1.1N•m)
330
2.2
± 20
670
1160
See Fig.12a,12b,15,16
300 (1.6mm from case )
-55 to + 175
PD - 94436C
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