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IRF3205 数据手册 - Infineon（英飞凌）
制造商:
Infineon（英飞凌）
分类:
MOS管
封装:
TO-220
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IRF3205数据手册
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若手册格式错乱，请下载阅览PDF原文件
7/2/04
www.irf.com 1
AUTOMOTIVE MOSFET
PD - 95879
HEXFET
®
Power MOSFET
V
DSS
= 55V
R
DS(on)
= 8.0mΩ
I
D
= 75A
S
D
G
Description
O Designed to support Linear Gate Drive
Applications
O 175°C Operating Temperature
O Low Thermal Resistance Junction - Case
O Rugged Process Technology and Design
O Fully Avalanche Rated
Features
TO-220AB
IRF3305
Absolute Maximum Ratings
Parameter Units
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
I
D
@ T
C
= 100°C
Continuous Drain Current, V
GS
@ 10V
A
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V (Package Limited)
I
DM
Pulsed Drain Current
c
P
D
@T
C
= 25°C
Power Dissipation W
Linear Derating Factor W/°C
V
GS
Gate-to-Source Voltage V
E
AS (Thermally limited)
Single Pulse Avalanche Energy
d
mJ
E
AS
(Tested )
Single Pulse Avalanche Energy Tested Value
h
I
AR
Avalanche Current
c
A
E
AR
Repetitive Avalanche Energy
g
mJ
T
J
Operating Junction and
T
STG
Storage Temperature Range °C
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
Junction-to-Case
i
––– 0.45
R
θCS
Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
R
θJA
Junction-to-Ambient
i
––– 62
-55 to + 175
300 (1.6mm from case )
10 lbf
y
in (1.1N
y
m)
330
2.2
± 20
Max.
140
99
560
75
860
470
See Fig.12a, 12b, 15, 16
Specifically designed for use in linear automotive
applications this HEXFET Power MOSFET utilizes
a rugged planar process technology and device
design, which greatly improves the Safe Operating
Area (SOA) of the device. These features, coupled
with 175°C junction operating temperature and
low thermal resistance of 0.45C/W make the
IRF3305 an ideal device for linear automotive
applications.
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