Datasheet 搜索 > IRF > IRF3709 数据手册 > IRF3709 数据手册 1/11 页
￥ 0
IRF3709 数据手册 - IRF
制造商:
IRF
描述:
功率MOSFET （ VDSS = 30V ， RDS（ON）最大值= 9.0mohm ，ID = 90A ） Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A)
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
页面导航:
封装尺寸在P8P9P10
标记信息在P8P9P10
技术参数、封装参数在P1
应用领域在P1
导航目录
IRF3709数据手册
Page:
of 11 Go
若手册格式错乱，请下载阅览PDF原文件
www.irf.com 1
02/20/01
Symbol Parameter Max. Units
V
DS
Drain-Source Voltage 30 V
V
GS
Gate-to-Source Voltage ± 20 V
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V 90
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V 57 A
I
DM
Pulsed Drain Current 360
P
D
@T
C
= 25°C Maximum Power Dissipation 120 W
P
D
@T
A
= 25°C Maximum Power Dissipation 3.1 W
Linear Derating Factor 0.96 mW/°C
T
J
, T
STG
Junction and Storage Temperature Range -55 to + 150 °C
IRF3709
IRF3709S
IRF3709L
SMPS MOSFET
HEXFET
®
Power MOSFET
V
DSS
R
DS(on)
max I
D
30V 9.0mΩ 90A
Notes through are on page 11
Absolute Maximum Ratings
D
2
Pak
IRF3709S
TO-220AB
IRF3709
TO-262
IRF3709L
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
Junction-to-Case ––– 1.04
R
θCS
Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
R
θJA
Junction-to-Ambient ––– 62
R
θJA
Junction-to-Ambient (PCB mount) ––– 40
Applications
Benefits
l Ultra-Low Gate Impedance
l Very Low RDS(on) at 4.5V V
GS
l Fully Characterized Avalanche Voltage
and Current
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
l High Frequency Buck Converters for
Server Processor Power Synchronous FET
l Optimized for Synchronous Buck
Converters Including Capacitive Induced
Turn-on Immunity
PD - 94071
查询IRF3709供应商 捷多邦，专业PCB打样工厂，24小时加急出货
器件 Datasheet 文档搜索
AiEMA 数据库涵盖高达 72,405,303 个元件的数据手册，每天更新 5,000 多个 PDF 文件
