IRF40DM229 数据手册 - Infineon（英飞凌）

单 P沟道 -12 V 1.3 W 10 nC 功率Mosfet 表面贴装 - MICRO-3

晶体管, MOSFET, StrongIRFET™, N沟道, 90 A, 40 V, 0.0042 ohm, 10 V, 3 V

IRF40H210 编带

场效应管(MOSFET) IRF40DM229 DirectFET

N沟道 40V 360A

Withstand voltage (1500 V ac, 1 minute) | ±(1%+0.05 Ω) ---|--- Overload (rated power x 5: 5 sec) | ±(1%+0.05 Ω) Insulation resistance (500 V dc) | At least 20 MΩ Temperature coefficient of resistance (+25 to +155°C) | ±260 ppm/°C Sudden temperature change (heat impact) (-55°C to +155°C: 5 cycles) | ±(1%+0.05 Ω) Type | L1 ±1 (mm) | L2 ±0.3 (mm) | W1 ±0.3 (mm) | W2 ±0.3 (mm) | Lead wire 1.25 mm2 | Lead wire 2 mm2 ---|---|---|---|---|---|--- IRF100NC | 90 | 70 | 80 | 70 | 1 Ω or higher | — IRF200NC | 150 | 130 | 80 | 70 | 4.1 Ω or higher | 1 to 4 Ω IRF300NC | 210 | 190 | 80 | 70 | 6.1 Ω or higher | 1 to 6 Ω IRF400NC | 270 | 250 | 80 | 70 | 8.1 Ω or higher | 1 to 8 Ω IRF500NC | 330 | 310 | 80 | 70 | 10.1 Ω or higher | 1 to 10 Ω ### 铝封装线绕 - 5 到 600W