Datasheet 搜索 > ON Semiconductor（安森美） > IRF520 数据手册 > IRF520 数据手册 1/9 页
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IRF520 数据手册 - ON Semiconductor（安森美）
制造商:
ON Semiconductor（安森美）
封装:
TO-220AB
描述:
N沟道 100V 9.2A
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
页面导航:
封装尺寸在P8
标记信息在P8
技术参数、封装参数在P1
电气规格在P2
导航目录
IRF520数据手册
Page:
of 9 Go
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IRF520N
HEXFET
®
Power MOSFET
PD - 91339A
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the
industry.
S
D
G
Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V 9.7
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V 6.8 A
I
DM
Pulsed Drain Current 38
P
D
@T
C
= 25°C Power Dissipation 48 W
Linear Derating Factor 0.32 W/°C
V
GS
Gate-to-Source Voltage ± 20 V
E
AS
Single Pulse Avalanche Energy 91 mJ
I
AR
Avalanche Current 5.7 A
E
AR
Repetitive Avalanche Energy 4.8 mJ
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T
J
Operating Junction and -55 to + 175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)
Absolute Maximum Ratings
Parameter Typ. Max. Units
R
θJC
Junction-to-Case ––– 3.1
R
θCS
Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
R
θJA
Junction-to-Ambient ––– 62
Thermal Resistance
V
DSS
= 100V
R
DS(on)
= 0.20Ω
I
D
= 9.7A
T
O
-22
0
AB
l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
Description
5/13/98
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