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IRF520 数据手册 - ST Microelectronics（意法半导体）
制造商:
ST Microelectronics（意法半导体）
分类:
MOS管
封装:
TO-220-3
描述:
N - 沟道增强型功率MOS晶体管 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
Pictures:
3D模型
符号图
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引脚图
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IRF520数据手册
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1/8August 2002
NEW DATASHEET ACCORDING TO PCN DSG/CT/0C23.
IRF520
N-CHANNEL 100V - 0.115 Ω - 10A TO-220
LOW GATE CHARGE STripFET™ II POWER MOSFET
■ TYPICAL R
DS
(on) = 0.115Ω
■ AVALANCHE RUGGED TECHNOLOGY
■ 100% AVALANCHE TESTED
■ LOW GATE CHARGE
■ HIGH CURRENT CAPABILITY
■ 175
o
C OPERATING TEMPERATURE
DESCRIPTION
This MOSFET series realized with STMicroelectronics
unique STripFET™ process has specifically been
designed to minimize input capacitance and gate charge.
It is therefore suitable as primary switch in advanced
high-efficiency, high-frequency isolated DC-DC
converters for Telecom and Computer applications. It is
also intended for any applications with low gate drive
requirements.
APPLICATIONS
■ HIGH CURRENT, HIGH SWITCHING SPEED
■ SOLENOID AND RELAY DRIVERS
■ REGULATOR
■ DC-DC & DC-AC CONVERTERS
■ MOTOR CONTROL, AUDIO AMPLIFIERS
■ AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, etc.)
TYPE
V
DSS
R
DS(on)
I
D
IRF520 100 V <0.27
Ω
10 A
1
2
3
TO-220
ABSOLUTE MAXIMUM RATINGS
(
•)
Pulse width limited by safe operating area. (1) I
SD
≤
10A, di/dt
≤
300A/µs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX
(2) Starting T
j
= 25
o
C, I
D
= 10A, V
DD
= 50V
Symbol Parameter Value Unit
V
DS
Drain-source Voltage (V
GS
= 0)
100 V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
Ω
)
100 V
V
GS
Gate- source Voltage ± 20 V
I
D
Drain Current (continuous) at T
C
= 25°C
10 A
I
D
Drain Current (continuous) at T
C
= 100°C
7A
I
DM
(
•)
Drain Current (pulsed) 40 A
P
tot
Total Dissipation at T
C
= 25°C
60 W
Derating Factor 0.4 W/°C
dv/dt
(1)
Peak Diode Recovery voltage slope 20 V/ns
E
AS
(2)
Single Pulse Avalanche Energy 100 mJ
T
stg
Storage Temperature
-55 to 175 °C
T
j
Operating Junction Temperature
INTERNAL SCHEMATIC DIAGRAM
Obsolete Product(s) - Obsolete Product(s) Obsolete Product(s) - Obsolete Product(s)
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