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IRF5210 数据手册 - TT Electronics Resistors
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IRF5210数据手册
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IRF5210S/L
HEXFET
®
Power MOSFET
PD - 91405C
l Advanced Process Technology
l Surface Mount (IRF5210S)
l Low-profile through-hole (IRF5210L)
l 175°C Operating Temperature
l Fast Switching
l P-Channel
l Fully Avalanche Rated
5/13/98
S
D
G
Absolute Maximum Ratings
Fifth Generation HEXFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for
use in a wide variety of applications.
The D
2
Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the highest
power capability and the lowest possible on-resistance in
any existing surface mount package. The D
2
Pak is suitable
for high current applications because of its low internal
connection resistance and can dissipate up to 2.0W in a
typical surface mount application.
The through-hole version (IRF5210L) is available for low-
profile applications.
Description
V
DSS
= -100V
R
DS(on)
= 0.06Ω
I
D
= -40A
2
D Pak
TO-262
Parameter Typ. Max. Units
R
θJC
Junction-to-Case ––– 0.75
R
θJA
Junction-to-Ambient ( PCB Mounted,steady-state)** ––– 40
Thermal Resistance
°C/W
Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ -10V -40
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ -10V -29 A
I
DM
Pulsed Drain Current -140
P
D
@T
A
= 25°C Power Dissipation 3.8 W
P
D
@T
C
= 25°C Power Dissipation 200 W
Linear Derating Factor 1.3 W/°C
V
GS
Gate-to-Source Voltage ± 20 V
E
AS
Single Pulse Avalanche Energy 780 mJ
I
AR
Avalanche Current -21 A
E
AR
Repetitive Avalanche Energy 20 mJ
dv/dt Peak Diode Recovery dv/dt -5.0 V/ns
T
J
Operating Junction and -55 to + 175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
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