Datasheet 搜索 > ON Semiconductor（安森美） > IRF640 数据手册 > IRF640 数据手册 1/12 页
￥ 0
IRF640 数据手册 - ON Semiconductor（安森美）
制造商:
ON Semiconductor（安森美）
封装:
CASE 221A-06
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
页面导航:
封装尺寸在P8P9P10
标记信息在P8P9P10
技术参数、封装参数在P1
电气规格在P2
导航目录
IRF640数据手册
Page:
of 12 Go
若手册格式错乱，请下载阅览PDF原文件
HEXFET
®
Power MOSFET
10/08/04
Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V 18
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V 13 A
I
DM
Pulsed Drain Current 72
P
D
@T
C
= 25°C Power Dissipation 150 W
Linear Derating Factor 1.0 W/°C
V
GS
Gate-to-Source Voltage ± 20 V
E
AS
Single Pulse Avalanche Energy 247 mJ
I
AR
Avalanche Current 18 A
E
AR
Repetitive Avalanche Energy 15 mJ
dv/dt Peak Diode Recovery dv/dt 8.1 V/ns
T
J
Operating Junction and -55 to +175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)
Absolute Maximum Ratings
Description
V
DSS
= 200V
R
DS(on)
= 0.15Ω
I
D
= 18A
S
D
G
l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Ease of Paralleling
l Simple Drive Requirements
D
2
Pak
IRF640NS
TO-220AB
IRF640N
TO-262
IRF640NL
IRF640N
IRF640NS
IRF640NL
Fifth Generation HEXFET
®
Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer with an
extremely efficient and reliable device for use in a wide
variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation levels
to approximately 50 watts. The low thermal resistance and
low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
The D
2
Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D
2
Pak is suitable for high current applications because of its
low internal connection resistance and can dissipate up to
2.0W in a typical surface mount application.
The through-hole version (IRF640NL) is available for low-
profile application.
www.irf.com 1
PD - 94006A
器件 Datasheet 文档搜索
AiEMA 数据库涵盖高达 72,405,303 个元件的数据手册，每天更新 5,000 多个 PDF 文件
