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IRF644SPBF 数据手册 - VISHAY（威世）
制造商:
VISHAY（威世）
分类:
MOS管
封装:
TO-263-3
描述:
N 通道 MOSFET，200V 至 250V，Vishay Semiconductor### MOSFET 晶体管，Vishay Semiconductor
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IRF644SPBF数据手册
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若手册格式错乱，请下载阅览PDF原文件
IRF644S, SiHF644S
www.vishay.com
Vishay Siliconix
S16-0754-Rev. D, 02-May-16
2
Document Number: 91040
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient R
thJA
-62
°C/W
Maximum Junction-to-Ambient
(PCB mount)
a
R
thJA
-40
Maximum Junction-to-Case (Drain) R
thJC
-1.0
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
DS
V
GS
= 0, I
D
= 250 μA 250 - - V
V
DS
Temperature Coefficient V
DS
/T
J
Reference to 25 °C, I
D
= 1 mA - 0.34 - V/°C
Gate-Source Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= 250 μA 2.0 - 4.0 V
Gate-Source Leakage I
GSS
V
GS
= ± 20 V - - ± 100 nA
Zero Gate Voltage Drain Current I
DSS
V
DS
= 250 V, V
GS
= 0 V - - 25
μA
V
DS
= 200 V, V
GS
= 0 V, T
J
= 125 °C - - 250
Drain-Source On-State Resistance R
DS(on)
V
GS
= 10 V I
D
= 8.4 A
b
- - 0.28
Forward Transconductance g
fs
V
DS
= 50 V, I
D
= 8.4 A
b
6.7 - - S
Dynamic
Input Capacitance C
iss
V
GS
= 0 V,
V
DS
= 25 V,
f = 1.0 MHz, see fig. 5
- 1300 -
pFOutput Capacitance C
oss
- 330 -
Reverse Transfer Capacitance C
rss
-85-
Total Gate Charge Q
g
V
GS
= 10 V
I
D
= 7.9 A, V
DS
= 200 V,
see fig. 6 and 13
b
--68
nC Gate-Source Charge Q
gs
--11
Gate-Drain Charge Q
gd
--35
Turn-On Delay Time t
d(on)
V
DD
= 125 V, I
D
= 7.9 A,
R
g
= 9.1 , R
D
= 8.7 , see fig. 10
b
-11-
ns
Rise Time t
r
-24-
Turn-Off Delay Time t
d(off)
-53-
Fall Time t
f
-49-
Internal Drain Inductance L
D
Between lead,
6 mm (0.25") from
package and center of
die contact
-4.5-
nH
Internal Source Inductance L
S
-7.5-
Gate Input Resistance R
g
f = 1 MHz, open drain 0.3 - 1.2
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
S
MOSFET symbol
showing the
integral reverse
p - n junction diode
--14
A
Pulsed Diode Forward Current
a
I
SM
--56
Body Diode Voltage V
SD
T
J
= 25 °C, I
S
= 14 A, V
GS
= 0 V
b
--1.8V
Body Diode Reverse Recovery Time t
rr
T
J
= 25 °C, I
F
= 7.9 A, dI/dt = 100 A/μs
b
- 250 500 ns
Body Diode Reverse Recovery Charge Q
rr
-2.34.6μC
Forward Turn-On Time t
on
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
D
S
G
S
D
G
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