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IRF7240 数据手册 - IRF
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HEXFET功率MOSFET HEXFET Power MOSFET
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IRF7240数据手册
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3/6/01
www.irf.com 1
IRF7240
HEXFET
®
Power MOSFET
These P-Channel MOSFETs from International
Rectifier utilize advanced processing techniques to
achieve the extremely low on-resistance per silicon
area. This benefit provides the designer with an
extremely efficient device for use in battery and load
management applications..
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infrared, or wave soldering techniques.
Description
l Ultra Low On-Resistance
l P-Channel MOSFET
l Surface Mount
l Available in Tape & Reel
PD- 93916
Parameter Max. Units
R
θJA
Maximum Junction-to-Ambient 50 °C/W
Thermal Resistance
Absolute Maximum Ratings
W
Top View
8
1
2
3
4
5
6
7
D
D
DG
S
A
D
S
S
V
DSS
R
DS(on)
max I
D
-40V 0.015@V
GS
= -10V -10.5A
0.025@V
GS
= -4.5V -8.4A
SO-8
Parameter Max. Units
V
DS
Drain- Source Voltage -40 V
I
D
@ T
A
= 25°C Continuous Drain Current, V
GS
@ -10V -10.5
I
D
@ T
A
= 70°C Continuous Drain Current, V
GS
@ -10V -8.6 A
I
DM
Pulsed Drain Current -43
P
D
@T
A
= 25°C Power Dissipation 2.5
P
D
@T
A
= 70°C Power Dissipation 1.6
Linear Derating Factor 20 mW/°C
V
GS
Gate-to-Source Voltage ± 20 V
T
J,
T
STG
Junction and Storage Temperature Range -55 to + 150 °C
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