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IRF7317 数据手册 - IRF
制造商:
IRF
描述:
HEXFET功率MOSFET HEXFET Power MOSFET
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IRF7317数据手册
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N-Ch P-Ch
V
DSS
20V -20V
R
DS(on)
0.029Ω 0.058Ω
N-Channel P-Channel
Drain-Source Voltage V
DS
20 -20
Gate-Source Voltage V
GS
± 12
T
A
= 25°C 6.6 -5.3
T
A
= 70°C 5.3 -4.3
Pulsed Drain Current I
DM
26 -21
Continuous Source Current (Diode Conduction) I
S
2.5 -2.5
T
A
= 25°C 2.0
T
A
= 70°C 1.3
Single Pulse Avalanche Energy E
AS
100 150 mJ
Avalanche Current I
AR
4.1 -2.9 A
Repetitive Avalanche Energy E
AR
0.20 mJ
Peak Diode Recovery dv/dt dv/dt 5.0 -5.0 V/ ns
Junction and Storage Temperature Range T
J,
T
STG
-55 to + 150 °C
PRELIMINARY
HEXFET
®
Power MOSFET
PD - 9.1568B
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements,
multiple devices can be used in an application with
dramatically reduced board space. The package is
designed for vapor phase, infra red, or wave soldering
techniques.
12/9/97
SO-8
l Generation V Technology
l Ultra Low On-Resistance
l Dual N and P Channel MOSFET
l Surface Mount
l Fully Avalanche Rated
IRF7317
Description
Thermal Resistance Ratings
Parameter Symbol Limit Units
Maximum Junction-to-Ambient R
θJA
62.5
°C/W
Continuous Drain Current
Maximum Power Dissipation
A
I
D
P
D
V
W
Symbol Maximum Units
D1
N-CHANNEL MOSFET
P-CHANNEL MOSFET
D1
D2
D2
G1
S2
G2
S1
Top View
8
1
2
3
4
5
6
7
Absolute Maximum Ratings ( T
A
= 25°C Unless Otherwise Noted)
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