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IRF7343数据手册
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N-Ch P-Ch
V
DSS
55V -55V
R
DS(on)
0.050 0.105
HEXFET
®
Power MOSFET
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements,
multiple devices can be used in an application with
dramatically reduced board space. The package is
designed for vapor phase, infra red, or wave soldering
techniques.
2/24/99
SO-8
l Generation V Technology
l Ultra Low On-Resistance
l Dual N and P Channel MOSFET
l Surface Mount
l Fully Avalanche Rated
IRF7343
Description
D1
N-CHANNEL MOSFET
P-CHANNEL MOSFET
D1
D2
D2
G1
S2
G2
S1
Top View
8
1
2
3
4
5
6
7
Max.
N-Channel P-Channel Units
V
DS
Drain-Source Voltage 55 -55 V
I
D
@ T
A
= 25°C Continuous Drain Current, V
GS
@ 10V 4.7 -3.4
I
D
@ T
A
= 70°C Continuous Drain Current, V
GS
@ 10V 3.8 -2.7
I
DM
Pulsed Drain Current 38 -27
P
D
@T
A
= 25°C Maximum Power Dissipation 2.0 W
P
D
@T
A
= 70°C Maximum Power Dissipation 1.3 W
E
AS
Single Pulse Avalanche Energy 72 114 mJ
I
AR
Avalanche Current 4.7 -3.4 A
E
AR
Repetitive Avalanche Energy 0.20 mJ
V
GS
Gate-to-Source Voltage ± 20 V
dv/dt Peak Diode Recovery dv/dt 5.0 -5.0 V/ns
T
J,
T
STG
Junction and Storage Temperature Range -55 to + 150 °C
Parameter
A
Absolute Maximum Ratings
Parameter Typ. Max. Units
R
θJA
Maximum Junction-to-Ambient ––– 62.5 °C/W
Thermal Resistance
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