Datasheet 搜索 > MOS管 > International Rectifier（国际整流器） > IRF7425TR 数据手册 > IRF7425TR 数据手册 1/9 页
器件3D模型￥ 0
IRF7425TR 数据手册 - International Rectifier（国际整流器）
制造商:
International Rectifier（国际整流器）
分类:
MOS管
封装:
SOIC-8
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
页面导航:
导航目录
IRF7425TR数据手册
Page:
of 9 Go
若手册格式错乱，请下载阅览PDF原文件
Parameter Max. Units
V
DS
Drain- Source Voltage -20 V
I
D
@ T
A
= 25°C Continuous Drain Current, V
GS
@ -4.5V -15
I
D
@ T
A
= 70°C Continuous Drain Current, V
GS
@ -4.5V -12 A
I
DM
Pulsed Drain Current -60
P
D
@T
A
= 25°C Power Dissipation 2.5
P
D
@T
A
= 70°C Power Dissipation 1.6
Linear Derating Factor 20 mW/°C
V
GS
Gate-to-Source Voltage ± 12 V
T
J,
T
STG
Junction and Storage Temperature Range -55 to + 150 °C
11/20/01
www.irf.com 1
IRF7425
HEXFET
®
Power MOSFET
These P-Channel HEXFET
®
Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the extremely low on-resistance
per silicon area. This benefit provides the designer
with an extremely efficient device for use in battery
and load management applications..
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infrared, or wave soldering techniques.
Description
Ultra Low On-Resistance
P-Channel MOSFET
Surface Mount
Available in Tape & Reel
PD- 94022A
Parameter Max. Units
R
θJA
Maximum Junction-to-Ambient 50 °C/W
Thermal Resistance
Absolute Maximum Ratings
W
Top View
8
1
2
3
4
5
6
7
D
D
DG
S
A
D
S
S
V
DSS
R
DS(on)
max (m
Ω)Ω)
Ω)Ω)
Ω) I
D
20V 8.2@V
GS
= -4.5V -15A
13@V
GS
= -2.5V -13A
SO-8
Downloaded from Elcodis.com electronic components distributor
器件 Datasheet 文档搜索
AiEMA 数据库涵盖高达 72,405,303 个元件的数据手册，每天更新 5,000 多个 PDF 文件
