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IRF9530 数据手册 - Vishay Siliconix
制造商:
Vishay Siliconix
分类:
MOS管
封装:
TO-220-3
Pictures:
3D模型
符号图
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封装尺寸在P8
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技术参数、封装参数在P1P2P9
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IRF9530数据手册
Page:
of 9 Go
若手册格式错乱，请下载阅览PDF原文件
Document Number: 91076 www.vishay.com
S11-0512-Rev. B, 21-Mar-11 3
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRF9530, SiHF9530
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Fig. 1 - Typical Output Characteristics, T
C
= 25 °C
Fig. 2 - Typical Output Characteristics, T
C
= 175 °C
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
91076_01
Bottom
To p
V
GS
- 15 V
- 10 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
- 4.5 V
20 µs Pulse Width
T
C
= 25 °C
- 4.5 V
- V
DS
, Drain-to-Source Voltage (V)
- I
D
, Drain Current (A)
10
0
10
1
10
1
10
0
10
-1
10
1
10
0
10
0
10
1
- V
DS
,
Drain-to-Source Voltage (V)
- I
D
, Drain Current (A)
Bottom
To p
V
GS
- 15 V
- 10 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
- 4.5 V
20 µs Pulse Width
T
C
= 175 °C
91076_02
- 4.5 V
10
-1
20 µs Pulse Width
V
DS
= - 50 V
10
1
10
0
- I
D
, Drain Current (A)
- V
GS
,
Gate-to-Source Voltage (V)
5678910
4
25 °C
175 °C
91076_03
I
D
= - 12 A
V
GS
= - 10 V
3.0
0.0
0.5
1.0
1.5
2.0
2.5
T
J
,
Junction Temperature (°C)
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
91076_04
- 60- 40 - 20 0 20 40 60 80 100 120 140 160 180
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