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IRF9530 数据手册 - Vishay Semiconductor（威世）
制造商:
Vishay Semiconductor（威世）
分类:
MOS管
封装:
TO-220-3
描述:
功率MOSFET Power MOSFET
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
页面导航:
封装尺寸在P8
型号编码规则在P1
功能描述在P1P9
技术参数、封装参数在P1P2P9
导航目录
IRF9530数据手册
Page:
of 9 Go
若手册格式错乱，请下载阅览PDF原文件
www.vishay.com Document Number: 91076
4 S11-0512-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRF9530, SiHF9530
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 8 - Maximum Safe Operating Area
1800
1500
1200
900
0
300
600
10
0
10
1
Capacitance (pF)
- V
DS
,
Drain-to-Source Voltage (V)
C
iss
C
rss
C
oss
V
GS
= 0 V, f = 1 MHz
C
iss
= C
gs
+ C
gd
, C
ds
Shorted
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
91076_05
Q
G
, Total Gate Charge (nC)
- V
GS
, Gate-to-Source Voltage (V)
20
16
12
8
0
4
0
10
50
40
3020
V
DS
= - 20 V
V
DS
= - 50 V
For test circuit
see figure 13
V
DS
= - 80 V
91076_06
I
D
= - 12 A
10
1
10
0
- V
SD
, Source-to-Drain Voltage (V)
- I
SD
, Reverse Drain Current (A)
1.0
5.0
4.03.02.0
25 °C
175 °C
V
GS
= 0 V
91076_07
10
-1
10 µs
100 µs
1 ms
10 ms
Operation in this area limited
by R
DS(on)
- V
DS
, Drain-to-Source Voltage (V)
- I
D
, Drain Current (A)
T
C
= 25 °C
T
J
= 175 °C
Single Pulse
10
2
0.1
2
5
0.1
2
5
1
2
5
10
2
5
25
1
25
10
25
10
2
2
5
10
3
91076_08
10
3
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