Datasheet 搜索 > MOS管 > Infineon（英飞凌） > IRF9530NSTRLPBF 数据手册 > IRF9530NSTRLPBF 数据手册 1/12 页
￥ 1.968
IRF9530NSTRLPBF 数据手册 - Infineon（英飞凌）
制造商:
Infineon（英飞凌）
分类:
MOS管
封装:
TO-263-3
描述:
晶体管, MOSFET, P沟道, -14 A, -100 V, 0.2 ohm, -10 V, -4 V
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
页面导航:
导航目录
IRF9530NSTRLPBF数据手册
Page:
of 12 Go
若手册格式错乱，请下载阅览PDF原文件
IRF9530NSPbF
IRF9530NLPbF
V
DSS
-100V
R
DS(on)
0.20
I
D
-14A
1 2016-5-27
Symbol Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ -10V -14
A
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ -10V -10
I
DM
Pulsed Drain Current -56
P
D
@T
A
= 25°C Maximum Power Dissipation 3.8 W
P
D
@T
C
= 25°C Maximum Power Dissipation 79 W
Linear Derating Factor 0.53 W/°C
V
GS
Gate-to-Source Voltage ± 20 V
E
AS
Single Pulse Avalanche Energy (Thermally Limited) 250
mJ
I
AR
Avalanche Current -8.4 A
E
AR
Repetitive Avalanche Energy 7.9 mJ
dv/dt Peak Diode Recovery dv/dt -5.0 V/ns
T
J
Operating Junction and -55 to + 175
T
STG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds (1.6mm from case) 300
Mounting torque, 6-32 or M3 screw 10 lbf•in (1.1N•m)
Absolute Maximum Ratings
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
JC
Junction-to-Case ––– 1.9
°C/W
R
JA
Junction-to-Ambient ( PCB Mount, steady state) ––– 40
D2 Pak
IRF9530NSPbF
G D S
Gate Drain Source
Benefits
Advanced Process Technology
Surface Mount (IRF9530NS)
Low-profile through-hole(IRF9530NL)
175°C Operating Temperature
Fast Switching
P-Channel
Fully Avalanche Rated
Lead-Free
Description
Fifth Generation HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized device
design that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient and reliable
device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the highest
power capability and the lowest possible on-resistance in any
existing surface mount package. The D2Pak is suitable for high
current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface
mount application.
The through-hole version (IRF9530NL) is available for low-
profile applications.
S
D
G
S
D
G
D
TO-262 Pak
IRF9530NLPbF
Base part number Package Type
Standard Pack
Form Quantity
IRF9530NLPbF
TO-262 Tube 50
IRF9530NLPbF (Obsolete)
IRF9530NSPbF D2-Pak Tape and Reel Left 800 IRF9530NSTRLPbF
Orderable Part Number
HEXFET
®
Power MOSFET
器件 Datasheet 文档搜索
AiEMA 数据库涵盖高达 72,405,303 个元件的数据手册，每天更新 5,000 多个 PDF 文件
