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IRFB3077PBF 数据手册 - Infineon（英飞凌）
制造商:
Infineon（英飞凌）
分类:
MOS管
封装:
TO-220-3
描述:
INFINEON IRFB3077PBF 晶体管, MOSFET, N沟道, 210 A, 75 V, 3.3 mohm, 10 V, 4 V
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IRFB3077PBF数据手册
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of 8 Go
若手册格式错乱，请下载阅览PDF原文件
IRFB3077PbF
2 www.irf.com
Notes:
Calculated continuous current based on maximum allowable junction
temperature. Bond wire current limit is 120A. Note that current
limitations arising from heating of the device leads may occur with
some lead mounting arrangements.
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by T
Jmax
, starting T
J
= 25°C, L = 0.028mH
R
G
= 25Ω, I
AS
= 120A, V
GS
=10V. Part not recommended for use
above this value.
I
SD
≤ 75A, di/dt ≤ 400A/μs, V
DD
≤ V
(BR)DSS
, T
J
≤ 175°C.
S
D
G
Pulse width ≤ 400μs; duty cycle ≤ 2%.
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as
C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
R
θ
is measured at T
J
approximately 90°C
Static @ T
J
= 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units
V
(BR)DSS
Drain-to-Source Breakdown Voltage 75 ––– ––– V
ΔV
(BR)DSS
/ΔT
J
Breakdown Voltage Temp. Coefficient ––– 0.091 ––– V/°C
R
DS(on)
Static Drain-to-Source On-Resistance ––– 2.8 3.3
mΩ
V
GS(th)
Gate Threshold Voltage 2.0 ––– 4.0 V
I
DSS
Drain-to-Source Leakage Current ––– ––– 20 μA
––– ––– 250
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100 nA
Gate-to-Source Reverse Leakage ––– ––– -100
R
G
Gate Input Resistance ––– 1.2 ––– Ω f = 1MHz, open drain
Dynamic @ T
J
= 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units
gfs Forward Transconductance 160 ––– ––– S
Q
g
Total Gate Charge ––– 160 220 nC
Q
gs
Gate-to-Source Charge ––– 37 –––
Q
gd
Gate-to-Drain ("Miller") Charge ––– 42 –––
t
d(on)
Turn-On Delay Time ––– 25 ––– ns
t
r
Rise Time ––– 87 –––
t
d(off)
Turn-Off Delay Time ––– 69 –––
t
f
Fall Time ––– 95 –––
C
iss
Input Capacitance ––– 9400 ––– pF
C
oss
Output Capacitance ––– 820 –––
C
rss
Reverse Transfer Capacitance ––– 350 –––
C
oss
eff. (ER)
Effective Output Capacitance (Energy Related)
i
––– 1090 –––
C
oss
eff. (TR)
Effective Output Capacitance (Time Related)h
––– 1260 –––
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units
I
S
Continuous Source Current ––– –––
210c
A
(Body Diode)
I
SM
Pulsed Source Current ––– ––– 850
(Body Diode)di
V
SD
Diode Forward Voltage ––– ––– 1.3 V
t
rr
Reverse Recovery Time ––– 42 63 ns
T
J
= 25°C V
R
= 64V,
––– 50 75
T
J
= 125°C I
F
= 75A
Q
rr
Reverse Recovery Charge ––– 59 89 nC
T
J
= 25°C
di/dt = 100A/μs g
––– 86 130
T
J
= 125°C
I
RRM
Reverse Recovery Current ––– 2.5 ––– A
T
J
= 25°C
t
on
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
I
D
= 75A
R
G
= 2.1Ω
V
GS
= 10V g
V
DD
= 38V
T
J
= 25°C, I
S
= 75A, V
GS
= 0V g
integral reverse
p-n junction diode.
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 5mAd
V
GS
= 10V, I
D
= 75A g
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 75V, V
GS
= 0V
V
DS
= 75V, V
GS
= 0V, T
J
= 125°C
MOSFET symbol
showing the
V
DS
= 38V
Conditions
V
GS
= 10V g
V
GS
= 0V
V
DS
= 50V
ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 60V j, See Fig.11
V
GS
= 0V, V
DS
= 0V to 60V h, See Fig. 5
Conditions
V
DS
= 50V, I
D
= 75A
I
D
= 75A
V
GS
= 20V
V
GS
= -20V
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