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IRFR014TRPBF 数据手册 - Vishay Siliconix
制造商:
Vishay Siliconix
分类:
MOS管
封装:
TO-252-3
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IRFR014TRPBF数据手册
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IRFR014, IRFU014, SiHFR014, SiHFU014
www.vishay.com
Vishay Siliconix
S13-0170-Rev. E, 04-Feb-13
1
Document Number: 91263
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Power MOSFET
FEATURES
• Dynamic dV/dt Rating
• Surface Mount (IRFR014, SiHFR014)
• Straight Lead (IRFU014, SiHFU014)
• Available in Tape and Reel
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU, SiHFU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.
Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= 25 V, starting T
J
= 25 °C, L = 924 μH, R
g
= 25 , I
AS
= 7.7 A (see fig. 12).
c. I
SD
10 A, dI/dt 90 A/μs, V
DD
V
DS
, T
J
150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
PRODUCT SUMMARY
V
DS
(V) 60
R
DS(on)
()V
GS
= 10 V 0.20
Q
g
(Max.) (nC) 11
Q
gs
(nC) 3.1
Q
gd
(nC) 5.8
Configuration Single
N-Channel MOSFET
G
D
S
DPAK
(TO-252)
IPAK
(TO-251)
G
D
S
S
D
G
D
ORDERING INFORMATION
Package DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) IPAK (TO-251)
Lead (Pb)-free and Halogen-free SiHFR014-GE3 SiHFR014TRL-GE3 SiHFR014TR-GE3 SIHFU014-GE3
Lead (Pb)-free
IRFR014PbF IRFR014TRLPbF
a
IRFR014TRPbF
a
IRFU014PbF
SiHFR014-E3 SiHFR014TL-E3
a
SiHFR014T-E3
a
SiHFU014-E3
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
DS
60
V
Gate-Source Voltage V
GS
± 20
Continuous Drain Current V
GS
at 10 V
T
C
= 25 °C
I
D
7.7
AT
C
= 100 °C 4.9
Pulsed Drain Current
a
I
DM
31
Linear Derating Factor 0.20
W/°C
Linear Derating Factor (PCB Mount)
e
0.020
Single Pulse Avalanche Energy
b
E
AS
27.4 mJ
Maximum Power Dissipation T
C
= 25 °C
P
D
25
W
Maximum Power Dissipation (PCB Mount)
e
T
A
= 25 °C 2.5
Peak Diode Recovery dV/dtc dV/dt 4.5 V/ns
Operating Junction and Storage Temperature Range T
J
, T
stg
- 55 to + 150
°C
Soldering Recommendations (Peak Temperature)
d
for 10 s 260
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