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IRFR320PBF 数据手册 - VISHAY（威世）
制造商:
VISHAY（威世）
分类:
MOS管
封装:
TO-252-3
描述:
功率MOSFET Power MOSFET
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
页面导航:
封装尺寸在P8P9P10
型号编码规则在P1
功能描述在P1P12
技术参数、封装参数在P1P2P12
导航目录
IRFR320PBF数据手册
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of 12 Go
若手册格式错乱，请下载阅览PDF原文件
IRFR320, IRFU320, SiHFR320, SiHFU320
www.vishay.com
Vishay Siliconix
S14-2355-Rev. E, 08-Dec-14
1
Document Number: 91273
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Power MOSFET
FEATURES
• Dynamic dV/dt rating
• Repetitive avalanche rated
• Surface mount (IRFR320,SiHFR320)
• Straight lead (IRFU320,SiHFU320)
• Available in tape and reel
• Fast switching
• Ease of paralleling
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU, SiHFU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.
Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= 50 V, starting T
J
= 25 °C, L = 29 mH, R
g
= 25 Ω, I
AS
= 3.1 A (see fig. 12).
c. I
SD
≤ 3.1 A, dI/dt ≤ 65 A/μs, V
DD
≤ V
DS
, T
J
≤ 150 °C.
d. 1.6 mm from case.
PRODUCT SUMMARY
V
DS
(V) 400
R
DS(on)
(Ω)V
GS
= 10 V 1.8
Q
g
(Max.) (nC) 20
Q
gs
(nC) 3.3
Q
gd
(nC) 11
Configuration Single
N-Channel MOSFET
G
D
S
DPAK
(TO-252)
IPAK
(TO-251)
G
D
S
S
D
G
D
Available
ORDERING INFORMATION
Package DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) IPAK (TO-251)
Lead (Pb)-free and Halogen-free SiHFR320-GE3 SiHFR320TRL-GE3
a
SiHFR320TR-GE3
a
- SiHFU320-GE3
Lead (Pb)-free
IRFR320PbF IRFR320TRLPbF
a
IRFR320TRPbF
a
IRFR320TRRPbF
a
IRFU320PbF
SiHFR320-E3 SiHFR320TL-E3
a
SiHFR320T-E3
a
SiHFR320TR-E3
a
SiHFU320-E3
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
DS
400
V
Gate-Source Voltage V
GS
± 20
Continuous Drain Current V
GS
at 10 V
T
C
= 25 °C
I
D
3.1
AT
C
= 100 °C 2.0
Pulsed Drain Current
a
I
DM
12
Linear Derating Factor 0.33
W/°C
Linear Derating Factor (PCB Mount)
e
0.020
Single Pulse Avalanche Energy
b
E
AS
160 mJ
Repetitive Avalanche Current
a
I
AR
3.1 A
Repetitive Avalanche Energy
a
E
AR
4.2 mJ
Maximum Power Dissipation T
C
= 25 °C
P
D
42
W
Maximum Power Dissipation (PCB Mount)
e
T
A
= 25 °C 2.5
Peak Diode Recovery dV/dt
c
dV/dt 4.0 V/ns
Operating Junction and Storage Temperature Range T
J
, T
stg
-55 to +150
°C
Soldering Recommendations (Peak Temperature)
d
for 10 s 260
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