Datasheet 搜索 > MOS管 > International Rectifier（国际整流器） > IRFS4229PBF 数据手册 > IRFS4229PBF 数据手册 1/9 页
￥ 15.45
IRFS4229PBF 数据手册 - International Rectifier（国际整流器）
制造商:
International Rectifier（国际整流器）
分类:
MOS管
封装:
TO-263-3
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
页面导航:
导航目录
IRFS4229PBF数据手册
Page:
of 9 Go
若手册格式错乱，请下载阅览PDF原文件
www.irf.com 1
09/16/08
IRFS4229PbF
Notes through are on page 9
Description
This HEXFET
®
Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch
applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve
low on-resistance per silicon area and low E
PULSE
rating. Additional features of this MOSFET are 175°C
operating junction temperature and high repetitive peak current capability. These features combine to
make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.
Features
l Advanced Process Technology
l Key Parameters Optimized for PDP Sustain,
Energy Recovery and Pass Switch Applications
l Low E
PULSE
Rating to Reduce Power
Dissipation in PDP Sustain, Energy Recovery
and Pass Switch Applications
l Low Q
G
for Fast Response
l High Repetitive Peak Current Capability for
Reliable Operation
l Short Fall & Rise Times for Fast Switching
l175°C Operating Junction Temperature for
Improved Ruggedness
l Repetitive Avalanche Capability for Robustness
and Reliability
S
D
G
PDP SWITCH
GDS
Gate Drain Source
D
2
Pak
D
S
D
G
* R
θJC
(end of life) for D
2
Pak and TO-262 = 0.65°C/W. This is the maximum measured value after 1000 temperature
cycles from -55 to 150°C and is accounted for by the physical wearout of the die attach medium.
V
DS
min
250 V
V
DS (Avalanche)
typ.
300 V
R
DS(ON)
typ. @ 10V
42
m
:
I
RP
max @ T
C
= 100°C
91 A
T
J
max
175 °C
Key Parameters
Absolute Maximum Ratings
Parameter Units
V
GS
Gate-to-Source Voltage V
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V
A
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
c
I
RP
@ T
C
= 100°C
Repetitive Peak Current
g
P
D
@T
C
= 25°C
Power Dissipation W
P
D
@T
C
= 100°C
Power Dissipation
Linear Derating Factor W/°C
T
J
Operating Junction and °C
T
STG
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw N
Thermal Resistance
Parameter Typ. Max. Units
R
θ
JC
Junction-to-Case
f
––– 0.45*
R
θ
JA
Junction-to-Ambient
f
––– 62
Max.
32
180
45
±30
91
300
-40 to + 175
10lb
x
in (1.1N
x
m)
330
190
2.2
PD - 97080B
器件 Datasheet 文档搜索
AiEMA 数据库涵盖高达 72,405,303 个元件的数据手册，每天更新 5,000 多个 PDF 文件
