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IRFS7437-7P 数据手册 - Infineon（英飞凌）
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Infineon（英飞凌）
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TO-263-7
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IRFS7437-7P数据手册
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HEXFET
®
Power MOSFET
S
D
G
Fig 1. Typical On-Resistance vs. Gate Voltage
Fig 2. Maximum Drain Current vs. Case Temperature
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
l Halogen Free
Applications
l Brushed Motor drive applications
l BLDC Motor drive applications
l PWM Inverterized topologies
l Battery powered circuits
l Half-bridge and full-bridge topologies
l Electronic ballast applications
l Synchronous rectifier applications
l Resonant mode power supplies
l OR-ing and redundant power switches
l DC/DC and AC/DC converters
GDS
Gate Drain Source
D
2
Pak 7 Pin
G
S
S
D
S
S
S
4 6 8 10 12 14 16 18 20
V
GS,
Gate -to -Source Voltage (V)
1.0
2.0
3.0
4.0
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
m
Ω
)
I
D
= 100A
T
J
= 25°C
T
J
= 125°C
25 50 75 100 125 150 175
T
C
, Case Temperature (°C)
0
50
100
150
200
250
300
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
Limited By Package
V
DSS
40V
R
DS(on)
typ.
1.1m
Ω
max. 1.4m
Ω
I
D
(Silicon Limited)
295A
c
I
D
(Package Limited)
195A
StrongIRFET
IRFS7437-7PPbF
1 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback February 19, 2015
Form Quantity
Tube 50 IRFS7437-7PPbF
Tape and Reel Left 800 IRFS7437TRL7PP
Base Part Number Package Type
Standard Pack
Orderable Part Number
IRFS7437-7PPbF D2Pak-7PIN
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