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IRFS7530-7PPBF 数据手册 - IFC
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IRFS7530-7PPBF数据手册
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StrongIRFET™
IRFS7530-7PPbF
HEXFET
®
Power MOSFET
G D S
Gate Drain Source
Application
Brushed Motor drive applications
BLDC Motor drive applications
Battery powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
Benefits
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free, RoHS Compliant
V
DSS
60V
R
DS(on)
typ.
1.15m
max
1.4m
I
D (Silicon Limited)
338A
I
D (Package Limited)
240A
D
S
G
Fig 1. Typical On-Resistance vs. Gate Voltage
Fig 2. Maximum Drain Current vs. Case Temperature
Base Part Number Package Type Standard Pack Complete Part Number
Form Quantity
IRFS7530-7PPbF
D
2
Pak-7PIN
Tube 50
IRFS7530-7PPbF
Tape and Reel Left 800
IRFS7530TRL7PP
4 8 12 16 20
V
GS
, Gate-to-Source Voltage (V)
0
1
2
3
4
5
6
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(m
)
T
J
= 25°C
T
J
= 125°C
I
D
= 100A
25 50 75 100 125 150 175
T
C
, Case Temperature (°C)
0
50
100
150
200
250
300
350
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
Limited By Package
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