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IRLL110PBF
1.332
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IRLL110PBF数据手册
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Parameter Max. Units
I
D
@ Tc = 25°C Continuous Drain Current, V
GS
@ 5.0 V 1.5
I
D
@ Tc = 100°C Continuous Drain Current, V
GS
@ 5.0 V 0.93
I
DM
Pulsed Drain Current 12
P
D
@Tc = 25°C Power Dissipation 3.1
P
D
@T
A
= 25°C Power Dissipation (PCB Mount)** 2..0 W
Linear Derating Factor 0.025
Linear Derating Factor (PCB Mount)** 0.017 W/°C
V
GS
Gate-to-Source Voltage -/+10 V
E
AS
Single Pulse Avalanche Energy 50 mJ
I
AR
Avalanche Current 1.5 A
E
AR
Repetitive Avalanche Energy 0.31 mJ
dv/dt Peak Diode Recovery dv/dt 5.5 V/ns
T
J,
T
STG
Junction and Storage Temperature Range -55 to + 150 °C
IRLL110PbF
HEXFET
®
Power MOSFET
PD - 95222
S
D
G
V
DSS
= 100V
R
DS(on)
= 0.54
I
D
= 1.5A
Third Generation HEXFETs from International Rectifier
provide the designer with the best combination of fast
switching, ruggedized device design, low on-resistance
and cost-effectiveness.
The SOT-223 package is designed for surface-mount using
vapor phase, infra red, or wave soldering techniques. Its
unique package design allows for easy automatic pick-and-
place as with other SOT or SOIC packages but has the
added advantage of improved thermal performance due to
an enlarged tab for heatsinking. Power dissipation of
grreater than 1.25W is possible in a typical surface mount
application.
04/27/04
Description
l Surface Mount
l Available in Tape & Reel
l Dynamic dv/dt Rating
l Repetitive Avalanche Rated
l Logic-Level Gate Drive
l RDS(on)Specified at VGS= 4V & 5V
l Fast Switching
l Lead-Free
SOT-223
** When mounted on 1'' square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
Parameter Typ. Max. Units
R
θJC
Junction-to-PCB ––– 40
R
θJA
Junction-to-Ambient. (PCB Mount)** ––– 60
Thermal Resistance
°C/W
Absolute Maximum Ratings
A
www.irf.com 1
Soldewring Temperature, for 10 seconds
300 (1.6mm from case)

IRLL110PBF 数据手册

Vishay Semiconductor(威世)
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IRLL110 数据手册

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