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IRLML2244TRPBF
器件3D模型
1.124
导航目录
  • 封装尺寸在P8
  • 型号编码规则在P1
  • 标记信息在P8
  • 封装信息在P10
  • 功能描述在P1
  • 技术参数、封装参数在P1
IRLML2244TRPBF数据手册
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1/24/11
IRLML2244TRPbF
HEXFET
®
Power MOSFET
PD - 97631
www.irf.com 1
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
Notes through
are on page 10
Micro3
TM
(SOT-23)
IRLML2244TRPbF
Features and Benefits
Features
Benefits
S
G
1
2
D3
Application(s)
System/Load Switch
Low R
DS(on)
( 54mΩ)
Lower switching losses
Industry-standard pinout Multi-vendor compatibility
Compatible with existing Surface Mount Techniques results in Easier manufacturing
RoHS compliant containing no lead, no bromide and no halogen
Environmentally friendly
MSL1, Consumer qualification Increased reliability
V
DS
-20 V
V
GS Max
± 12 V
R
DS(on) max
(@V
GS
= -4.5V)
54
m
Ω
R
DS(on) max
(@V
GS
= -2.5V)
95
m
Ω
Absolute Maximum Ratings
Symbol Parameter Units
V
DS
Drain-Source Voltage
V
I
D
@ T
A
= 25°C Continuous Drain Current, V
GS
@ -4.5V
I
D
@ T
A
= 70°C Continuous Drain Current, V
GS
@ -4.5V
I
DM
Pulsed Drain Current
P
D
@T
A
= 25°C
Maximum Power Dissipation
P
D
@T
A
= 70°C
Maximum Power Dissipation
Linear Derating Factor
W/°C
V
GS
Gate-to-Source Voltage
V
T
J,
T
STG
Junction and Storage Temperature Range °C
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
θJA
Junction-to-Ambient
e
––– 100
R
θJA
Junction-to-Ambient (t<10s)
f
––– 99
Max.
-4.3
-3.4
-55 to + 150
± 12
0.01
-20
1.3
0.8
-18
W
°C/W
A

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INFINEON  IRLML2244TRPBF  晶体管, MOSFET, P沟道, -4.3 A, -20 V, 0.042 ohm, -4.5 V, -1.1 V
International Rectifier(国际整流器)
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