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IRLML2402 数据手册 - IRF
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IRF
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HEXFET功率MOSFET HEXFET Power MOSFET
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IRLML2402数据手册
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Parameter Typ. Max. Units
R
θJA
Maximum Junction-to-Ambient 75 100 °C/W
IRLML6402
HEXFET
®
Power MOSFET
These P-Channel MOSFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low on-
resistance per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that HEXFET
power MOSFETs are well known for, provides the designer with
an extremely efficient and reliable device for use in battery and
load management.
A thermally enhanced large pad leadframe has been incorporated
into the standard SOT-23 package to produce a HEXFET Power
MOSFET with the industry's smallest footprint. This package,
dubbed the Micro3, is ideal for applications where printed
circuit board space is at a premium. The low profile (<1.1mm)
of the Micro3 allows it to fit easily into extremely thin application
environments such as portable electronics and PCMCIA cards.
The thermal resistance and power dissipation are the best
available.
Thermal Resistance
V
DSS
= -20V
R
DS(on)
= 0.065Ω
l Ultra Low On-Resistance
l P-Channel MOSFET
l SOT-23 Footprint
l Low Profile (<1.1mm)
l Available in Tape and Reel
l Fast Switching
Description
8/13/99
www.irf.com 1
S
D
G
PD- 93755
Parameter Max. Units
V
DS
Drain- Source Voltage -20 V
I
D
@ T
A
= 25°C Continuous Drain Current, V
GS
@ -4.5V -3.7
I
D
@ T
A
= 70°C Continuous Drain Current, V
GS
@ -4.5V -2.2 A
I
DM
Pulsed Drain Current -22
P
D
@T
A
= 25°C Power Dissipation 1.3
P
D
@T
A
= 70°C Power Dissipation 0.8
Linear Derating Factor 0.01 W/°C
E
AS
Single Pulse Avalanche Energy 11 mJ
V
GS
Gate-to-Source Voltage ± 12 V
T
J,
T
STG
Junction and Storage Temperature Range -55 to + 150 °C
Absolute Maximum Ratings
W
Micro3
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