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IRLML2803
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IRLML2803数据手册
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IRLML2803PbF
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage 30   V V
GS
= 0V, I
D
= 250µA
ΔV
(BR)DSS
/ΔT
J
Breakdown Voltage Temp. Coefficient  0.029 VC Reference to 25°C, I
D
= 1mA
  0.25 V
GS
= 10V, I
D
= 0.91A
  0.40 V
GS
= 4.5V, I
D
= 0.46A
V
GS(th)
Gate Threshold Voltage 1.0   V V
DS
= V
GS
, I
D
= 250µA
g
fs
Forward Transconductance 0.87   S V
DS
= 10V, I
D
= 0.46A
  1.0 V
DS
= 24V, V
GS
= 0V
  25 V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
Gate-to-Source Forward Leakage   -100 V
GS
= -20V
Gate-to-Source Reverse Leakage   100 V
GS
= 20V
Q
g
Total Gate Charge  3.3 5.0 I
D
= 0.91A
Q
gs
Gate-to-Source Charge  0.48 0.72 nC V
DS
= 24V
Q
gd
Gate-to-Drain ("Miller") Charge  1.1 1.7 V
GS
= 10V, See Fig. 6 and 9
t
d(on)
Turn-On Delay Time  3.9  V
DD
= 15V
t
r
Rise Time  4.0  I
D
= 0.91A
t
d(off)
Turn-Off Delay Time  9.0  R
G
= 6.2Ω
t
f
Fall Time  1.7  R
D
= 16Ω, See Fig. 10
C
iss
Input Capacitance  85  V
GS
= 0V
C
oss
Output Capacitance  34  pF V
DS
= 25V
C
rss
Reverse Transfer Capacitance  15  = 1.0MHz, See Fig. 5
Ω
µA
nA
ns
I
GSS
I
DSS
Drain-to-Source Leakage Current
R
DS(on)
Static Drain-to-Source On-Resistance
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current MOSFET symbol
(Body Diode) showing the
I
SM
Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
V
SD
Diode Forward Voltage   1.2 V T
J
= 25°C, I
S
= 0.91A, V
GS
= 0V
t
rr
Reverse Recovery Time  26 40 ns T
J
= 25°C, I
F
= 0.91A
Q
rr
Reverse RecoveryCharge  22 32 nC di/dt = 100A/µs
Source-Drain Ratings and Characteristics
A
  7.3
  0.54
S
D
G
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
0.91A, di/dt 120A/µs, V
DD
V
(BR)DSS
,
T
J
150°C
Notes:
Pulse width 300µs; duty cycle 2%.
Limited by T
Jmax
, starting T
J
= 25°C, L = 9.4mH, R
G
= 25Ω, I
AS
= 0.9A.
Surface mounted on FR-4 board, t 5sec.

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