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IRLZ24NS 数据手册 - International Rectifier（国际整流器）
制造商:
International Rectifier（国际整流器）
分类:
MOS管
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IRLZ24NS数据手册
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IRLZ24NS/L
HEXFET
®
Power MOSFET
PD - 91358E
l Advanced Process Technology
l Surface Mount (IRLZ24NS)
l Low-profile through-hole (IRLZ24NL)
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
Parameter Typ. Max. Units
R
θJC
Junction-to-Case ––– 3.3
R
θJA
Junction-to-Ambient ( PCB Mounted,steady-state)** ––– 40
Thermal Resistance
°C/W
Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V 18
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V 13 A
I
DM
Pulsed Drain Current 72
P
D
@T
A
= 25°C Power Dissipation 3.8 W
P
D
@T
C
= 25°C Power Dissipation 45 W
Linear Derating Factor 0.30 W/°C
V
GS
Gate-to-Source Voltage ±16 V
E
AS
Single Pulse Avalanche Energy 68 mJ
I
AR
Avalanche Current 11 A
E
AR
Repetitive Avalanche Energy 4.5 mJ
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T
J
Operating Junction and -55 to + 175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
Absolute Maximum Ratings
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The D
2
Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D
2
Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRLZ24NL) is available for low-
profile applications.
Description
V
DSS
= 55V
R
DS(on)
= 0.06Ω
I
D
= 18A
2
D Pak
TO-262
S
D
G
5/12/98
l Logic-Level Gate Drive
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