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IRLZ34 数据手册 - Vishay Siliconix
制造商:
Vishay Siliconix
分类:
MOS管
封装:
TO-220-3
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
页面导航:
封装尺寸在P8P9
标记信息在P8P9
技术参数、封装参数在P1
电气规格在P2
导航目录
IRLZ34数据手册
Page:
of 11 Go
若手册格式错乱，请下载阅览PDF原文件
IRLZ34NS/L
HEXFET
®
Power MOSFET
PD - 91308A
l Advanced Process Technology
l Surface Mount (IRLZ34NS)
l Low-profile through-hole (IRLZ34NL)
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
Parameter Typ. Max. Units
R
θJC
Junction-to-Case ––– 2.2
R
θJA
Junction-to-Ambient ( PCB Mounted,steady-state)** ––– 40
Thermal Resistance
°C/W
Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V 30
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V 21 A
I
DM
Pulsed Drain Current 110
P
D
@T
A
= 25°C Power Dissipation 3.8 W
P
D
@T
C
= 25°C Power Dissipation 68 W
Linear Derating Factor 0.45 W/°C
V
GS
Gate-to-Source Voltage ±16 V
E
AS
Single Pulse Avalanche Energy 110 mJ
I
AR
Avalanche Current 16 A
E
AR
Repetitive Avalanche Energy 6.8 mJ
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T
J
Operating Junction and -55 to + 175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
Absolute Maximum Ratings
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The D
2
Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D
2
Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRLZ34NL) is available for low-
profile applications.
Description
V
DSS
= 55V
R
DS(on)
= 0.035Ω
I
D
= 30A
2
D Pak
TO-262
S
D
G
5/12/98
l Logic-Level Gate Drive
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