Datasheet 搜索 > 稳压芯片 > Intersil（英特矽尔） > ISL6260CIRZ-T 数据手册 > ISL6260CIRZ-T 数据手册 6/28 页
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ISL6260CIRZ-T 数据手册 - Intersil（英特矽尔）
制造商:
Intersil（英特矽尔）
分类:
稳压芯片
封装:
VFQFN-40
描述:
多相PWM稳压器用于IMVP - 6移动处理器 Multiphase PWM Regulator for IMVP-6 Mobile CPUs
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
页面导航:
引脚图在P2Hot
典型应用电路图在P14P15
原理图在P16
封装尺寸在P28
型号编码规则在P1
标记信息在P1
封装信息在P1
技术参数、封装参数在P5P6P20P21
应用领域在P1
电气规格在P5P6P20P21P22
导航目录
ISL6260CIRZ-T数据手册
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6
FN9259.3
June 21, 2010
PMON Maximum Voltage Vpmonmax 2.8 3 V
PMON Sourcing Current VSEN = 1.0V, Droop-Vo = 50mV 2.0 mA
PMON Sinking Current VSEN = 1.0V, Droop-Vo = 50mV 2.0 mA
Maximum Current Sinking Capability See Figure 36 Vpmon/
250
Vpmon/
180
Vpmon/
130
A
PMON Impedance When PMON is within its sourcing/sinking
current range (Note 3)
7 Ω
3. Limits established by characterization and are not production tested.
Electrical Specifications Operating Conditions: V
DD
= 5V, T
A
= -40°C to +100°C, unless otherwise noted. Parameters with MIN and/or
MAX limits are 100% tested at +25°C, unless otherwise specified. Temperature limits established by
characterization and are not production tested. (Continued)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
ISL6260C
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