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IXFH12N100P 数据手册 - IXYS Semiconductor
制造商:
IXYS Semiconductor
分类:
MOS管
封装:
TO-247-3
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IXFH12N100P数据手册
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© 2011 IXYS CORPORATION, All Rights Reserved
DS99920B(03/11)
V
DSS
= 1000V
I
D25
= 12A
R
DS(on)
≤≤
≤≤
≤ 1.05
ΩΩ
ΩΩ
Ω
t
rr
≤≤
≤≤
≤ 300ns
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
Symbol Test Conditions Maximum Ratings
V
DSS
T
J
= 25°C to 150°C 1000 V
V
DGR
T
J
= 25°C to 150°C, R
GS
= 1MΩ 1000 V
V
GSS
Continuous ± 30 V
V
GSM
Transient ± 40 V
I
D25
T
C
= 25°C12A
I
DM
T
C
= 25°C, Pulse Width Limited by T
JM
24 A
I
AR
T
C
= 25°C6A
E
AS
T
C
= 25°C 750 mJ
dv/dt I
S
≤ I
DM
, V
DD
≤ V
DSS
,T
J
≤ 150°C 15 V/ns
P
D
T
C
= 25°C 463 W
T
J
-55 ... +150 °C
T
JM
150 °C
T
stg
-55 ... +150 °C
T
L
Maximum Lead Temperature for Soldering 300 °C
T
SOLD
Plastic Body for 10s 260 °C
M
d
Mounting Torque (TO-247) 1.13/10 Nm/lb.in.
F
C
Mounting Force (PLUS220) 11..65/2.5..14.6 N/lb.
Weight TO-247 6 g
PLUS220 types 4 g
IXFH12N100P
IXFV12N100P
IXFV12N100PS
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, Unless Otherwise Specified) Min. Typ. Max.
BV
DSS
V
GS
= 0V, I
D
= 1mA 1000 V
V
GS(th)
V
DS
= V
GS
, I
D
= 1mA 3.5 6.5 V
I
GSS
V
GS
= ± 30V, V
DS
= 0V ± 100 nA
I
DSS
V
DS
= V
DSS
, V
GS
= 0V 20 μA
T
J
= 125°C 1.0 mA
R
DS(on)
V
GS
= 10V, I
D
= 0.5 • I
D25
, Note 1 1.05 Ω
Polar
TM
HiPerFET
TM
Power MOSFETs
Features
z
Low R
DS(on)
and Q
G
z
Avalanche Rated
z
Low Package Inductance
z
Fast Intrinsic Rectifier
Advantages
z
High Power Density
z
Easy to Mount
z
Space Savings
Applications
z
Switch-Mode and Resonant-Mode
Power Supplies
z
DC-DC Converters
z
Laser Drivers
z
AC and DC Motor Drives
z
Robotics and Servo Controls
PLUS220 (IXFV)
G
D
S
D (Tab)
PLUS220SMD (IXFV_S)
G
S
G = Gate D = Drain
S = Source Tab = Drain
TO-247 (IXFH)
D (Tab)
G
S
D
D (Tab)
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