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IXFK64N50P 数据手册 - IXYS Semiconductor
制造商:
IXYS Semiconductor
分类:
MOS管
封装:
TO-264-3
描述:
IXYS SEMICONDUCTOR IXFK64N50P 晶体管, MOSFET, 极性FET, N沟道, 64 A, 500 V, 85 mohm, 10 V, 5.5 V
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IXFK64N50P数据手册
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© 2006 IXYS All rights reserved
DS99348E(03/06)
PolarHV
TM
HiPerFET
Power MOSFET
V
DSS
= 500 V
I
D25
=64 A
R
DS(on)
≤≤
≤≤
≤ 85 m
ΩΩ
ΩΩ
Ω
t
rr
≤≤
≤≤
≤ 200 ns
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Features
l
International standard packages
l
Fast recovery diode
l
Unclamped Inductive Switching (UIS)
rated
l
Low package inductance
- easy to drive and to protect
Advantages
l
Easy to mount
l
Space savings
l
High power density
Symbol Test Conditions Characteristic Values
(T
J
= 25° C, unless otherwise specified) Min. Typ. Max.
BV
DSS
V
GS
= 0 V, I
D
= 250 µA 500 V
V
GS(th)
V
DS
= V
GS
, I
D
= 8 mA 3.0 5.5 V
I
GSS
V
GS
= ±30 V
DC
, V
DS
= 0 ±200 nA
I
DSS
V
DS
= V
DSS
25 µA
V
GS
= 0 V T
J
= 125° C 1000 µA
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
85 m Ω
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
Symbol Test Conditions Maximum Ratings
V
DSS
T
J
= 25° C to 150° C 500 V
V
DGR
T
J
= 25° C to 150° C; R
GS
= 1 MΩ 500 V
V
GSS
Continuous ±30 V
V
GSM
Transient ±40 V
I
D25
T
C
= 25° C64A
I
DM
T
C
= 25° C, pulse width limited by T
JM
150 A
I
AR
T
C
= 25° C64A
E
AR
T
C
= 25° C80mJ
E
AS
T
C
= 25° C 2.5 J
dv/dt I
S
≤ I
DM
, di/dt ≤ 100 A/µs, V
DD
≤ V
DSS
, 20 V/ns
T
J
≤ 150° C, R
G
= 4 Ω
P
D
T
C
= 25° C 830 W
T
J
-55 ... +150 °C
T
JM
150 °C
T
stg
-55 ... +150 °C
M
d
Mounting torque (TO-264) 1.13/10 Nm/lb.in.
Weight TO-264 10 g
PLUS247 6 g
T
L
1.6 mm (0.062 in.) from case for 10 s 300 ° C
T
SOLD
Plastic body for 10 s 260 ° C
S
G
D
(TAB)
TO-264 (IXFK)
PLUS247 (IXFX)
(TAB)
G = Gate D = Drain
S = Source Tab = Drain
IXFK 64N50P
IXFX 64N50P
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