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IXFN80N50Q2 数据手册 - IXYS Semiconductor
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IXYS Semiconductor
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MOS管
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SOT-227-4
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IXFN80N50Q2数据手册
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Symbol Test Conditions Maximum Ratings
V
DSS
T
J
= 25C to 150C 500 V
V
DGR
T
J
= 25C to 150C, R
GS
= 1M 500 V
V
GSS
Continuous 30 V
V
GSM
Transient 40 V
I
D25
T
C
= 25C 72 A
I
DM
T
C
= 25C, Pulse Width Limited by T
JM
320 A
I
A
T
C
= 25C 80A
E
AS
T
C
= 25C5J
dv/dt I
S
I
DM
, V
DD
V
DSS
, T
J
150C 20 V/ns
P
D
T
C
= 25C 890 W
T
J
-55 ... +150 C
T
JM
150 C
T
stg
-55 ... +150 C
V
ISOL
50/60 Hz, RMS, t = 1minute 2500 V~
I
ISOL
1mA, t = 1s 3000 V~
M
d
Mounting Torque for Base Plate 1.5/13 Nm/lb.in
Terminal Connection Torque 1.3/11.5 Nm/lb.in
Weight 30 g
Symbol Test Conditions Characteristic Values
(T
J
= 25C Unless Otherwise Specified) Min. Typ. Max.
BV
DSS
V
GS
= 0V, I
D
= 1mA 500 V
V
GS(th)
V
DS
= V
GS
, I
D
= 8mA 3.0 5.5 V
I
GSS
V
GS
= 30V, V
DS
= 0V 200 nA
I
DSS
V
DS
= V
DSS
, V
GS
= 0V 100 A
T
J
= 125C 5 mA
R
DS(on)
V
GS
= 10V, I
D
= 40A, Note 1 65 m
HiperFET
TM
Power MOSFET
Q2-Class
IXFN80N50Q2
V
DSS
= 500V
I
D25
= 72A
R
DS(on)
65m
t
rr
250ns
DS99031C(02/14)
N-Channel Enhancement Mode
Fast Intrinsic Rectifier
Features
International Standard Package
Low Intrinsic Gate Resistance
miniBLOC with Aluminum Nitride
Isolation
Avanlache Rated
Low Package Inductance
Fast Intrinsic Rectifier
Low R
DS(on)
and Q
G
Advantages
High Power Density
Easy to Mount
Space Savings
Applications
DC-DC Converters
Battery Chargers
Switch-Mode and Resonant-Mode
Power Supplies
DC Choppers
Temperature and Lighting Controls
miniBLOC
E153432
G
D
S
S
G = Gate D = Drain
S = Source
Either Source Terminal S can be used as
the Source Terminal or the Kelvin Source
(Gate Return) Terminal.
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