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JANSR2N7389
2096.052
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JANSR2N7389数据手册
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Absolute Maximum Ratings
Parameter Units
I
D
@ V
GS
= 12V, T
C
= 25°C Continuous Drain Current -6.5
I
D
@ V
GS
= 12V, T
C
= 100°C Continuous Drain Current -4.1
I
DM
Pulsed Drain Current À -26
P
D
@ T
C
= 25°C Max. Power Dissipation 25 W
Linear Derating Factor 0.2 W/°C
V
GS
Gate-to-Source Voltage ±20 V
E
AS
Single Pulse Avalanche Energy Á 165 mJ
I
AR
Avalanche Current À -6.5 A
E
AR
Repetitive Avalanche Energy À 2.5 mJ
dv/dt Peak Diode Recovery dv/dt  -22
V/ns
T
J
Operating Junction -55 to 150
T
STG
Storage Temperature Range °C
Pckg. Mounting Surface Temp. 300 (for 5s)
Weight 0.42 (Typical) g
Pre-Irradiation
International Rectifier’s RAD-Hard
TM
HEXFET
®
MOSFET technology provides high performance
power MOSFETs for space applications. This
technology has over a decade of proven performance
and reliability in satellite applications. These devices
have been characterized for both Total Dose and
Single Event Effects (SEE). The combination of low
Rdson and low gate charge reduces the power losses
in switching applications such as DC to DC converters
and motor control. These devices retain all of the
well established advantages of MOSFETs such as
voltage control, fast switching, ease of paralleling
and temperature stability of electrical parameters.
A
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (LCC-18)
09/04/14
www.irf.com 1
Product Summary
Part Number Radiation Level RDS(on) ID QPL Part Number
IRHE9130 100K Rads (Si) 0.30 -6.5A JANSR2N7389U
IRHE93130 300K Rads (Si) 0.30 -6.5A JANSF2N7389U
Features:
n Single Event Effect (SEE) Hardened
n Low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Package
n Surface Mount
n Light Weight
For footnotes refer to the last page
LCC-18
IRHE9130
JANSR2N7389U
100V, P-CHANNEL
REF: MIL-PRF-19500/630
RAD-Hard
HEXFET
®
MOSFET TECHNOLOGY
n ESD Rating: Class 1B per MIL-STD-750,
Method 1020
PD-90881D

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