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JS28F128P33T85 数据手册 - Micron(镁光)
制造商:
Micron(镁光)
封装:
TSSOP
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
页面导航:
引脚图在P2Hot
原理图在P3
封装尺寸在P22
型号编码规则在P21
标记信息在P23
标签指示器在P26P31
封装信息在P24P25P27P28P29P30P32
焊接温度在P20
功能描述在P2
技术参数、封装参数在P13P30
电气规格在P14
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JS28F128P33T85数据手册
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FUJITSU SEMICONDUCTOR
DATA SHEET
Copyright©2014 FUJITSU SEMICONDUCTOR LIMITED All rights reserved
2014.2
Memory FRAM
512K (64 K × 8) Bit SPI
MB85RS512T
■ DESCRIPTION
MB85RS512T is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 65,536
words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the
nonvolatile memory cells.
MB85RS512T adopts the Serial Peripheral Interface (SPI).
The MB85RS512T is able to retain data without using a back-up battery, as is needed for SRAM.
The memory cells used in the MB85RS512T can be used for 10
13
read/write operations, which is a significant
improvement over the number of read and write operations supported by Flash memory and E
2
PROM.
MB85RS512T does not take long time to write data like Flash memories or E
2
PROM, and MB85RS512T
takes no wait time.
■ FEATURES
• Bit configuration : 65,536 words × 8 bits
• Serial Peripheral Interface : SPI (Serial Peripheral Interface)
Correspondent to SPI mode 0 (0, 0) and mode 3 (1, 1)
• Operating frequency : 1.8 V to 2.7 V, 25 MHz (Max)
2.7 V to 3.6 V, 30 MHz (Max)
For FSTRD command 2.7 V to 3.6 V, 40 MHz (Max)
• High endurance : 10
13
times / byte
• Data retention : 10 years (+85 °C)
• Operating power supply voltage : 1.8 V to 3.6 V
• Low power consumption : Operating power supply current 10 mA (Max@30 MHz)
Standby current 120 μA (Max)
Sleep current 10 μA (Max)
• Operation ambient temperature range : -40 °C to +85 °C
• Package : 8-pin plastic SOP (FPT-8P-M02)
RoHS compliant
DS501-00029-0v01-E
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