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KA7812ETSTU 数据手册 - ON Semiconductor（安森美）
制造商:
ON Semiconductor（安森美）
分类:
稳压芯片
封装:
TO-220-3
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3D模型
符号图
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典型应用电路图在P21P22P23P24P25
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封装尺寸在P26P27
型号编码规则在P3P29
标记信息在P1P29
封装信息在P3
技术参数、封装参数在P4P28
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电气规格在P5P6P7P8P9P10P11P12P13P14P15P16
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KA7812ETSTU数据手册
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KA78XXE / KA78XXAE — 3-Terminal 1 A Positive Voltage Regulator
© 2006 Fairchild Semiconductor Corporation www.fairchildsemi.com
KA78XXE / KA78XXAE Rev. 1.9 5
Electrical Characteristics (KA7806E)
Refer to test circuit, -40°C < T
J
< 125°C, I
O
= 500 mA, V
I
= 11 V, C
I
= 0.33 μF, C
O
= 0.1 μF, unless otherwise specified.
Notes:
5. Load and line regulation are specified at constant junction temperature. Changes in V
O
due to heating effects must
be taken into account separately. Pulse testing with low duty is used.
6. These parameters, although guaranteed, are not 100% tested in production.
Symbol Parameter Conditions Min. Typ. Max. Unit
V
O
Output Voltage
T
J
= +25°C 5.75 6.00 6.25
V
5.0 mA ≤I
O
≤1.0 A, P
O
≤15 W,
V
I
= 8.0 V to 21 V
5.70 6.00 6.30
Regline Line Regulation
(5)
T
J
= +25°C
V
I
= 8 V to 25 V 5.0 120.0
mV
V
I
= 9 V to 13 V 1.5 60.0
Regload Load Regulation
(5)
T
J
= +25°C
I
O
= 5 mA to 1.5 A 9 120
mV
I
O
= 250 mA to 750 mA 3 60
I
Q
Quiescent Current T
J
= +25°C58mA
ΔI
Q
Quiescent Current
Change
I
O
= 5 mA to 1 A 0.5
mA
V
I
= 8 V to 25 V 1.3
ΔV
O
/ΔT Output Voltage Drift
(6)
I
O
= 5 mA -0.8 mV/°C
V
N
Output Noise Voltage f = 10 Hz to 100 kHz, T
A
= +25°C45μV
RR Ripple Rejection
(6)
f = 120 Hz, V
I
= 9 V to 19 V 59 75 dB
V
Drop
Dropout Voltage I
O
= 1 A, T
J
= +25°C2V
R
O
Output Resistance
(6)
f = 1 kHz 19 mΩ
I
SC
Short-Circuit Current V
I
= 35 V, T
A
= +25°C 250 mA
I
PK
Peak Current
(6)
T
J
= +25°C2.2A
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