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KBP103G 数据手册 - Taiwan Semiconductor（台湾半导体）
制造商:
Taiwan Semiconductor（台湾半导体）
封装:
KBP-4
描述:
桥式整流器 1.0 Amp 200 Volt 30 Amp IFSM
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
KBP103G数据手册
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of 2 Go
若手册格式错乱，请下载阅览PDF原文件
Dimensions in inches and (millimeters)
Version: A06
KBP101G - KBP107G
Single Phase 1.0 AMP. Glass Passivated Bridge Rectifiers
KBP
.460(11.68)
.420(10.6)
.160(4.1)
.140(3.6)
.153(3.9)
.146(3.7)
.050(1.27)
.5
MIN
(12.7)
SPACING
AC
.035(0.9)
.028(0.7)
.600(15.24)
.560(14.22)
Features
UL Recognized File # E-96005
Glass passivated junction
Ideal for printed circuit board
Reliable low cost construction
High surge current capability
High temperature soldering guaranteed:
260
o
C / 10 seconds at 5 lbs., ( 2.3 kg )
tension
Leads solderable per MIL-STD-202, Method
208
Small size, simple installation
Maximum Ratings and Electrical Characteristics
Rating at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number Symbol
KBP
101G
KBP
102G
KBP
103G
KBP
104G
KBP
105G
KBP
106G
KBP
107G
Units
Maximum Recurrent Peak Reverse Voltage V
RRM
50 100 200 400 600 800 1000 V
Maximum RMS Voltage V
RMS
35 70 140 280 420 560 700 V
Maximum DC Blocking Voltage V
DC
50 100 200 400 600 800 1000 V
Maximum Average Forward Rectified Current
@T
A
= 50
o
C
I
(AV)
1.0 A
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
I
FSM
30 A
Maximum Instantaneous Forward Voltage
@ 1.0A
V
F
1.0 V
Maximum DC Reverse Current @ T
A
=25
o
C
at Rated DC Blocking Voltage @ T
A
=125
o
C
I
R
10
500
uA
uA
Typical Thermal resistance (Note) R
θJA
R
θJL
28
10
o
C/W
Operating Temperature Range T
J
-55 to +150
o
C
Storage Temperature Range T
STG
-55 to +150
o
C
Note: Thermal Resistance from Junction to Ambient and from Junction to lead Mounted on P.C.B.
With 0.2” x 0.2”
(
5mm x 5mm
)
Copper Pads.
Downloaded from Elcodis.com electronic components distributor
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