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KBP105G 数据手册 - Taiwan Semiconductor（台湾半导体）
制造商:
Taiwan Semiconductor（台湾半导体）
封装:
KBP-4
描述:
桥式整流器 1.0 Amp 600 Volt 30 Amp IFSM
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
KBP105G数据手册
Page:
of 2 Go
若手册格式错乱，请下载阅览PDF原文件
FIG.3- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT PER BRIDGE ELEMENT
FIG.2- TYPICAL REVERSE CHARACTERISTICS
0
20 40 60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
Tj=125C
0
Tj=25 C
0
10
2
4
6
8
1
40
80
60
20
100
NUMBER OF CYCLES AT 60Hz
20
40
60
80
100
120
140
160
0
1.0
2.0
1.5
RATINGS AND CHARACTERISTIC CURVES (KBP101G THRU KBP107G)
Tj=125 C
O
FIG.1- MAXIMUM FORWARD CURRENT DERATING
CURVE
AVERAGE FORWARD CURRENT. (A)AVERAGE FORWARD CURRENT. (A)
20
40
60
80
100
120
140
160
0
1.0
2.0
0.5
1.5
FIG.5- TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS PER BRIDGE ELEMENT
INSTANTANEOUS FORWARD CURRENT. (A)
0.6 0.7 0.90.8 1.0 1.31.1 1.2 1.4
0.01
0.1
1
10
INSTANTANEOUS FORWARD VOLTAGE. (V)
Tj=25 C
PULSE WIDTH-300 S
1% DUTY CYCLE
0
AMBIENT TEMPERATURE. ( C)
o
PEAK FORWARD SURGE CURRENT. (A)PEAK FORWARD SURGE CURRENT. (A)
10
0
20
0
30
50
40
INSTANTANEOUS REVERSE CURRENT. ( A)INSTANTANEOUS REVERSE CURRENT. (
Version: A06
FIG.4- TYPICAL JUNCTION CAPACITANCE
1
2
5
10 20 800
100
1000
600
500
400
300
200
100
0
REVERSE VOLTAGE. (V)
200
500
JUNCTION CAPACITANCE.(pF)
Tj=25 C
0
50
0.1
0.5
1000
100
10
1
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