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LM5109BMA/NOPB
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LM5109BMA/NOPB数据手册
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LM5109B
SNVS477C FEBRUARY 2007REVISED JANUARY 2016
LM5109B High Voltage 1-A Peak Half-Bridge Gate Driver
1 Features 3 Description
The LM5109B device is a cost-effective, high-voltage
1
Drives Both a High-Side and Low-Side N-Channel
gate driver designed to drive both the high-side and
MOSFET
the low-side N-channel MOSFETs in a synchronous
1-A Peak Output Current (1.0-A Sink and 1.0-A
buck or a half-bridge configuration. The floating
Source)
high-side driver is capable of working with rail
voltages up to 90 V. The outputs are independently
Inputs Compatible With Independent TTL and
controlled with cost-effective TTL and
CMOS
CMOS-compatible input thresholds. The robust level
Bootstrap Supply Voltage to 108-V DC
shift technology operates at high speed while
Fast Propagation Times (30 ns Typical)
consuming low power and providing clean level
Drives 1000-pF Load With 15-ns Rise and Fall transitions from the control input logic to the high-side
gate driver. Undervoltage lockout is provided on both
Times
the low-side and the high-side power rails. The
Excellent Propagation Delay Matching (2 ns
device is available in the 8-pin SOIC and thermally-
Typical)
enhanced 8-pin WSON packages.
Supply Rail Undervoltage Lockout
Device Information
(1)
Low Power Consumption
PART NUMBER PACKAGE BODY SIZE (NOM)
8-Pin SOIC and Thermally-Enhanced 8-Pin
SOIC (8) 4.90 mm × 3.91 mm
WSON Package
LM5109B
WSON (8) 4.00 mm × 4.00 mm
2 Applications
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Current-Fed, Push-Pull Converters
Half- and Full-Bridge Power Converters
Solid-State Motor Drives
Two-Switch Forward Power Converters
Simplified Application Diagram
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.

LM5109BMA/NOPB 数据手册

TI(德州仪器)
24 页 / 1.35 MByte
TI(德州仪器)
8 页 / 0.21 MByte

LM5109 数据手册

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