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LM6172IN 数据手册 - National Semiconductor（美国国家半导体）
制造商:
National Semiconductor（美国国家半导体）
封装:
DIP
描述:
双高速，低功耗，低失真，电压反馈型放大器 Dual High Speed, Low Power, Low Distortion, Voltage Feedback Amplifiers
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
页面导航:
典型应用电路图在P17
原理图在P14
封装尺寸在P18P19
型号编码规则在P2
封装信息在P2
焊接温度在P3
功能描述在P1
技术参数、封装参数在P3P6
应用领域在P1
电气规格在P3P4P5P6P7P8P9P10P11P12P13
导航目录
LM6172IN数据手册
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±
15V DC Electrical Characteristics (Continued)
Unless otherwise specified, all limits guaranteed for T
J
= 25˚C,V
+
= +15V, V
−
= −15V, V
CM
= 0V, and R
L
=1kΩ. Boldface
limits apply at the temperature extremes
Symbol Parameter Conditions Typ
(Note 5)
LM6172I
Limit
(Note 6)
Units
Sinking, R
L
= 100Ω −85 −60 mA
−50 max
I
SC
Output Short Circuit Sourcing 107 mA
Current Sinking −105 mA
I
S
Supply Current Both Amplifiers 4.6 8 mA
9 max
±
15V AC Electrical Characteristics
Unless otherwise specified, T
J
= 25˚C, V
+
= +15V, V
−
= −15V, V
CM
= 0V, and R
L
=1kΩ
LM6172I
Symbol Parameter Conditions Typ Units
(Note 5)
SR Slew Rate A
V
= +2, V
IN
=13V
PP
3000 V/µs
A
V
= +2, V
IN
=10V
PP
2500 V/µs
Unity-Gain Bandwidth 100 MHz
−3 dB Frequency A
V
= +1 160 MHz
A
V
= +2 62 MHz
Bandwidth Matching between Channels 2 MHz
φ
m
Phase Margin 40 Deg
t
s
Settling Time (0.1%) A
V
= −1, V
OUT
=
±
5V, 65 ns
R
L
= 500Ω
A
D
Differential Gain (Note 9) 0.28 %
φ
D
Differential Phase (Note 9) 0.6 Deg
e
n
Input-Referred f = 1kHz
12
Voltage Noise
i
n
Input-Referred f = 1kHz
1
Current Noise
Second Harmonic f = 10kHz −110 dB
Distortion (Note 10) f = 5MHz −50 dB
Third Harmonic f = 10kHz −105 dB
Distortion (Note 10) f = 5MHz −50 dB
±
5V DC Electrical Characteristics
Unless otherwise specified, all limits guaranteed for T
J
= 25˚C, V
+
= +5V, V
−
= −5V, V
CM
= 0V, and R
L
=1kΩ. Boldface lim-
its apply at the temperature extremes
Symbol Parameter Conditions Typ
(Note 5)
LM6172I
Limit
(Note 6)
Units
V
OS
Input Offset Voltage 0.1 3 mV
4 max
TC V
OS
Input Offset Voltage 4 µV/˚C
Average Drift
I
B
Input Bias Current 1.4 2.5 µA
3.5 max
I
OS
Input Offset Current 0.02 1.5 µA
LM6172
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