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器件3D模型￥ 10.807
LMC6061AIM/NOPB 数据手册 - TI（德州仪器）
制造商:
TI（德州仪器）
分类:
运算放大器
封装:
SOIC-8
描述:
TEXAS INSTRUMENTS LMC6061AIM/NOPB 单运算放大器
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典型应用电路图在P12
封装尺寸在P16P18P19
标记信息在P16
封装信息在P16P17P18P19
技术参数、封装参数在P2
应用领域在P1P10P13P21
电气规格在P2P3P4P5P6P7P8P9
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LMC6061AIM/NOPB数据手册
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LMC6061
www.ti.com
SNOS648D –NOVEMBER 1994–REVISED MARCH 2013
PRECISION CMOS SINGLE MICROPOWER OPERATIONAL AMPLIFIER
Check for Samples: LMC6061
1
FEATURES
DESCRIPTION
The LMC6061 is a precision single low offset voltage,
2
(Typical Unless Otherwise Noted)
micropower operational amplifier, capable of
• Low Offset Voltage: 100 µV
precision single supply operation. Performance
• Ultra Low Supply Current: 20 μA
characteristics include ultra low input bias current,
high voltage gain, rail-to-rail output swing, and an
• Operates From 4.5V to 15V Single Supply
input common mode voltage range that includes
• Ultra Low Input Bias Current: 10 fA
ground. These features, plus its low power
• Output Swing Within 10 mV of Supply Rail,
consumption, make the LMC6061 ideally suited for
100k Load
battery powered applications.
• Input Common-mode Range Includes V
−
Other applications using the LMC6061 include
• High Voltage Gain: 140 dB
precision full-wave rectifiers, integrators, references,
sample-and-hold circuits, and true instrumentation
• Improved Latchup Immunity
amplifiers.
APPLICATIONS
This device is built with TI's advanced double-Poly
Silicon-Gate CMOS process.
• Instrumentation Amplifier
For designs that require higher speed, see the
• Photodiode and Infrared Detector Preamplifier
LMC6081 precision single operational amplifier.
• Transducer Amplifiers
For a dual or quad operational amplifier with similar
• Hand-held Analytic Instruments
features, see the LMC6062 or LMC6064 respectively.
• Medical Instrumentation
PATENT PENDING
• D/A Converter
• Charge Amplifier for Piezoelectric Transducers
Connection Diagrams
Figure 1. 8-Pin PDIP/SOIC Figure 2. Distribution of LMC6061 Input Offset
Voltage (T
A
= +25°C)
Top View
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Copyright © 1994–2013, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
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