Datasheet 搜索 > 电池管理芯片 > ST Microelectronics（意法半导体） > LNBH29EPTR 数据手册 > LNBH29EPTR 数据手册 22/31 页
器件3D模型￥ 17.727
LNBH29EPTR 数据手册 - ST Microelectronics（意法半导体）
制造商:
ST Microelectronics（意法半导体）
分类:
电池管理芯片
封装:
QFN-16
描述:
LNB供给与控制, 升压与I2C接口, 12 V电源, QFN-26
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
页面导航:
引脚图在P9P10Hot
典型应用电路图在P5P8P12P13P20P22
原理图在P4
封装尺寸在P23P24P25P26P27P28P29
封装信息在P1P28
技术参数、封装参数在P11P31
应用领域在P1P31
电气规格在P20P21P22
导航目录
LNBH29EPTR数据手册
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Electrical characteristics LNBH29
22/31 DocID023065 Rev 3
T
J
from 0 to 85 °C, V
I
= 12 V.
Refer to Section 5: Typical application circuits, T
J
from 0 to 85 °C, DATA register bits set to
“0”, RSEL = 16 k, DSQIN = LOW, V
IN
= 12 V, I
OUT
= 50 mA, unless otherwise stated.
Typical values are referred to T
J
= 25 °C. V
OUT
= V
OUT
pin voltage. See software description
section for I²C access to the STATUS register.
Note: If the output voltage is lower than the min. value the VMON I²C bit is set to 1.
If VMON = 0 then V
OUT
> 80% of V
OUT
typical.
If VMON = 1 then V
OUT
< 95% of V
OUT
typical.
Table 11. Address pin characteristics
Symbol Parameter Test condition Min. Typ. Max. Unit
V
ADDR-1
“0001000(R/W)” address pin
voltage range
R/W bit determines the transmission
mode: read (R/W=1) write (R/W=0)
00.8V
V
ADDR-2
“0001001(R/W)” address pin
voltage range
R/W bit determines the transmission
mode: read (R/W=1) write (R/W=0)
25V
Table 12. Output voltage diagnostic (VMON BIT, STATUS register) characteristics
Symbol Parameter Test condition Min. Typ. Max. Unit
V
TH-L
Diagnostic low threshold at
V
OUT
= 13.0 V
VSEL0=1, VSEL1=VSEL2=0 80 90 95 %
V
TH-L
Diagnostic low threshold at
V
OUT
= 18.15 V
VSEL1=0, VSEL0=VSEL2=1 80 90 95 %
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