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LT1004CS8-1.2#PBF 数据手册 - Linear Technology（凌力尔特）
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Linear Technology（凌力尔特）
分类:
电压基准芯片
封装:
SOIC-8
描述:
LINEAR TECHNOLOGY LT1004CS8-1.2#PBF 电压基准, 微功率, 分流 - 固定, LT1004系列, 1.235V, NSOIC-8
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LT1004CS8-1.2#PBF数据手册
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LT1004
3
1004fc
For more information www.linear.com/LT1004
elecTrical characTerisTics
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
SYMBOL
PARAMETER CONDITIONS
C, I SUFFIXES H SUFFIX
UNITSMIN TYP MAX MIN TYP MAX
V
Z
Reverse Breakdown Voltage I
R
= 100µA
LT1004M: –55°C ≤ T
A
≤ 125°C
LT1004C: 0°C ≤ T
A
≤ 70°C
LT1004I: –40°C ≤ T
A
≤ 85°C
●
●
●
1.231
1.220
1.225
1.220
1.235
1.230
1.235
1.230
1.239
1.245
1.245
1.245
2.480
2.460
2.470
2.460
2.500
2.500
2.500
2.500
2.520
2.535
2.530
2.530
V
V
V
V
∆V
Z
∆Temp
Average Temperature Coefficient I
MIN
≤ I
R
≤ 20mA (Note 3) 20 20 ppm/°C
I
MIN
Minimum Operating Current
●
8 10 12 20 µA
∆V
Z
∆I
R
Reverse Breakdown Voltage
Change with Current
I
MIN
≤ I
R
≤ 1mA
●
1.0
1.5
1.0
1.5
mV
mV
1mA ≤ I
R
≤ 20mA
●
10
20
10
20
mV
mV
r
Z
Reverse Dynamic Impedance I
R
= 100µA
●
0.2 0.6
1.5
0.2 0.6
1.5
Ω
Ω
e
n
Wide Band Noise (RMS) I
R
= 100µA, 10Hz ≤ f ≤ 10kHz 60 120 µV
∆V
Z
∆Time
Long Term Stability I
R
= 100µA, T
A
= 25°C ± 0.1°C 20 20 ppm/kHr
The l denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at T
A
= 25°C.
Note 2: All specifications are for T
A
= 25°C unless otherwise noted.
Note 3: Selected devices with guaranteed maximum temperature
coefficient are available upon request.
For MIL-STD components, please refer to LTC883C data sheet for test
listing and parameters.
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