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LT1160IN
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LT1160IN数据手册
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1
LT1160/LT1162
11602fb
APPLICATIO S
U
FEATURES
DESCRIPTIO
U
TYPICAL APPLICATIO
U
Half-/Full-Bridge
N-Channel
Power MOSFET Drivers
Floating Top Driver Switches Up to 60V
Drives Gate of Top N-Channel MOSFET
above Load HV Supply
180ns Transition Times Driving 10,000pF
Adaptive Nonoverlapping Gate Drives Prevent
Shoot-Through
Top Drive Protection at High Duty Cycles
TTL/CMOS Input Levels
Undervoltage Lockout with Hysteresis
Operates at Supply Voltages from 10V to 15V
Separate Top and Bottom Drive Pins
The LT
®
1160/LT1162 are cost effective half-/full-bridge
N-channel power MOSFET drivers. The floating driver can
drive the topside N-channel power MOSFETs operating off
a high voltage (HV) rail of up to 60V.
The internal logic prevents the inputs from turning on the
power MOSFETs in a half-bridge at the same time. Its
unique adaptive protection against shoot-through cur-
rents eliminates all matching requirements for the two
MOSFETs. This greatly eases the design of high efficiency
motor control and switching regulator systems.
During low supply or start-up conditions, the undervoltage
lockout actively pulls the driver outputs low to prevent the
power MOSFETs from being partially turned on. The 0.5V
hysteresis allows reliable operation even with slowly vary-
ing supplies.
The LT1162 is a dual version of the LT1160 and is available
in a 24-pin PDIP or in a 24-pin SO Wide package.
PWM of High Current Inductive Loads
Half-Bridge and Full-Bridge Motor Control
Synchronous Step-Down Switching Regulators
3-Phase Brushless Motor Drive
High Current Transducer Drivers
Class D Power Amplifiers
SV
+
PV
+
UV OUT
IN TOP
IN BOTTOM
14
13
12
11
9
8
1
10
4
2
3
BOOST
T GATE DR
T GATE FB
T SOURCE
B GATE DR
B GATE FB
LT1160
1N4148
HV = 60V MAX
C
BOOST
1µF
10µF
25V
12V
PWM
0Hz TO 100kHz
1160 TA01
IRFZ44
IRFZ44
56
1000µF
100V
SGND PGND
IN TOP IN BOTTOM T GATE DR B GATE DR
LL L L
LH L H
HL H L
HH L L
+
, LT, LTC and LTM are registered trademarks of Linear Technology Corporation.
All other trademarks are the property of their respective owners.

LT1160IN 数据手册

Linear Technology(凌力尔特)
16 页 / 0.22 MByte

LT1160 数据手册

Linear Technology(凌力尔特)
LINEAR TECHNOLOGY  LT1160CS#PBF  双芯片, 半桥和全桥, 10V-15V电源, 1.5A输出, 300ns延迟, SOIC-14
Linear Technology(凌力尔特)
Linear Technology(凌力尔特)
Linear Technology(凌力尔特)
Linear Technology(凌力尔特)
Linear Technology(凌力尔特)
Linear Technology(凌力尔特)
Linear Technology(凌力尔特)
Linear Technology(凌力尔特)
ADI(亚德诺)
半桥 MOSFET 灌:1.5A 拉:1.5A
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