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LT1169CS8#PBF 数据手册 - Linear Technology(凌力尔特)
制造商:
Linear Technology(凌力尔特)
分类:
放大器、缓冲器
封装:
SOIC-8
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
页面导航:
典型应用电路图在P10P11P12
技术参数、封装参数在P1
应用领域在P10P11P12
导航目录
LT1169CS8#PBF数据手册
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1
LT1169
Dual Low Noise,
Picoampere Bias Current,
JFET Input Op Amp
D
U
ESCRIPTIO
S
F
EA
T
U
RE
The LT1169 achieves a new standard of excellence in noise
performance for a dual JFET op amp. For the first time low
voltage noise (6nV/√Hz) is simultaneously offered with
extremely low current noise (1fA/√Hz), providing the low-
est total noise for high impedance transducer applications.
Unlike most JFET op amps, the very low input bias current
(5pA Typ) is maintained over the entire common mode
range which results in an extremely high input resistance
(10
13
Ω). When combined with a very low input capaci-
tance (1.5pF) an extremely high input impedance results,
making the LT1169 the first choice for amplifying low level
signals from high impedance transducers. The low input
capacitance also assures high gain linearity when buffering
AC signals from high impedance transducers.
The LT1169 is unconditionally stable for gains of 1 or more,
even with 1000pF capacitive loads. Other key features are
0.6mV V
OS
and a voltage gain over 4 million. Each indi-
vidual amplifier is 100% tested for voltage noise, slew rate
(4.2V/µs), and gain-bandwidth product (5.3MHz).
The LT1169 is offered in the S8 and N8 packages.
A full set of matching specifications are provided for
precision instrumentation amplifier front ends. Specifica-
tions at ±5V supply operation are also provided. For an
even lower voltage noise please see the LT1113 data sheet.
■
Input Bias Current, Warmed Up: 20pA Max
■
100% Tested Low Voltage Noise: 8nV/√Hz Max
■
S8 and N8 Package Standard Pinout
■
Very Low Input Capacitance: 1.5pF
■
Voltage Gain: 1.2 Million Min
■
Offset Voltage: 2mV Max
■
Input Resistance: 10
13
Ω
■
Gain-Bandwidth Product: 5.3MHz Typ
■
Guaranteed Specifications with ±5V Supplies
■
Guaranteed Matching Specifications
U
S
A
O
PP
L
IC
AT
I
■
Photocurrent Amplifiers
■
Hydrophone Amplifiers
■
High Sensitivity Piezoelectric Accelerometers
■
Low Voltage and Current Noise Instrumentation
Amplifier Front Ends
■
Two and Three Op Amp Instrumentation Amplifiers
■
Active Filters
U
A
O
PP
L
IC
AT
ITY
P
I
CA
L
, LTC and LT are registered trademarks of Linear Technology Corporation.
Low Noise Light Sensor with DC Servo
8
+V
–V
4
LT1169 • TA01
R1
1M
C1
2pF
7
5
6
–
+
1/2 LT1169
R2C2 > C1R1
C
D
= PARASITIC PHOTODIODE CAPACITANCE
V
OUT
= 100mV/µWATT FOR 200nm WAVE LENGTH
330mV/µWATT FOR 633nm WAVE LENGTH
R5
10k
D2
1N914
V–
R4
1k
D1
1N914
R3
1k
1
3
2
–
+
1/2 LT1169
C2
0.022µF
HAMAMATSU
S1336-5BK
(908) 231-0960
V
OUT
R2
100k
C
D
2N3904
SOURCE RESISTANCE (Ω)
10k
1k
100
10
1
100 10k 100k 1M1k
10M
LT1169 • TA02
TOTAL 1kHz VOLTAGE NOISE DENSITY (nV/ √Hz)
100M
1G
–
+
V
N
R
SOURCE
T
A
= 25°C
V
S
= ±15V
V
N
SOURCE
RESISTANCE
ONLY
V
N
=
√
(V
OP AMP
)
2
+ 4kTR
S
+ 2qI
B
R
S
2
1kHz Output Voltage Noise
Density vs Source Resistance
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