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Datasheet 搜索 > 存储芯片 > ST Microelectronics(意法半导体) > M27C256B-10C6TR 数据手册 > M27C256B-10C6TR 数据手册 1/16 页
M27C256B-10C6TR
器件3D模型
0.95
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  • 典型应用电路图在P1
  • 封装尺寸在P12P13P14P15
  • 型号编码规则在P10
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M27C256B-10C6TR数据手册
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1/16August 2002
M27C256B
256 Kbit (32Kb x 8) UV EPROM and OTP EPROM
5V ± 10% SUPPLY VOLTAGE in READ
OPERATION
ACCESS TIME: 45ns
LOW POWER CONSUMPTION:
Active Current 30mA at 5MHz
Standby Current 100µA
PROGRAMMING VOLTAGE: 12.75V ± 0.25V
PROGRAMMING TIME: 100µs/word
ELECTRONIC SIGNATURE
Manufacturer Code: 20h
Device Code: 8Dh
DESCRIPTION
The M27C256B is a 256 Kbit EPROM offered in
the two ranges UV (ultra violet erase) and OTP
(one time programmable). It is ideally suited for mi-
croprocessor systems and is organized as 32,768
by 8 bits.
The FDIP28W (window ceramic frit-seal package)
has a transparent lid which allows the user to ex-
pose the chip to ultraviolet light to erase the bit pat-
tern. A new pattern can then be written to the
device by following the programming procedure.
For applications where the content is programmed
only one time and erasure is not required, the
M27C256B is offered in PDIP28, PLCC32 and
TSOP28 (8 x 13.4 mm) packages.
Figure 1. Logic Diagram
AI00755B
15
A0-A14 Q0-Q7
V
PP
V
CC
M27C256B
G
E
V
SS
8
1
28
28
1
FDIP28W (F) PDIP28 (B)
PLCC32 (C) TSOP28 (N)
8 x 13.4 mm

M27C256B-10C6TR 数据手册

ST Microelectronics(意法半导体)
16 页 / 0.14 MByte

M27C256B10C6 数据手册

ST Microelectronics(意法半导体)
ST Microelectronics(意法半导体)
ST Microelectronics(意法半导体)
256千位(32KB × 8 ) UV EPROM和OTP EPROM 256 Kbit (32Kb 】 8) UV EPROM and OTP EPROM
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