Datasheet 搜索 > 存储芯片 > Micron（镁光） > M29W128GH70ZS6F TR 数据手册 > M29W128GH70ZS6F TR 数据手册 1/77 页
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M29W128GH70ZS6F TR 数据手册 - Micron（镁光）
制造商:
Micron（镁光）
分类:
存储芯片
封装:
LBGA-64
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M29W128GH70ZS6F TR数据手册
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Parallel NOR Flash Embedded Memory
M29W128GH, M29W128GL
Features
• Supply voltage
– V
CC
= 2.7–3.6V (program, erase, read)
– V
CCQ
= 1.65–3.6V (I/O buffers)
– V
PPH
= 12V for fast program (optional)
• Asynchronous random/page read
– Page size: 8 words or 16 bytes
– Page access: 25, 30ns
– Random access: 60ns
1
, 70, 80ns
• Fast program commands: 32-word (64-byte) write
buffer
• Enhanced buffered program commands: 256-word
• Program time
– 16µs per byte/word TYP
– Chip program time: 5s with V
PPH
and 8s without
V
PPH
• Memory organization
– Uniform blocks: 128 main blocks, 128-Kbytes or
64-Kwords each
• Program/erase controller
– Embedded byte/word program algorithms
• Program/erase suspend and resume capability
– Read from any block during a PROGRAM SUS-
PEND operation
– Read or program another block during an ERASE
SUSPEND operation
• Unlock bypass, block erase, chip erase, write to buf-
fer, enhanced buffer program commands
– Fast buffered/batch programming
– Fast block/chip erase
• V
PP
/WP# pin protection
– Protects first or last block regardless of block
protection settings
• Software protection
– Volatile protection
– Nonvolatile protection
– Password protection
• Extended memory block
– 128-word (256-byte) memory block for perma-
nent, secure identification
• Common flash interface
– 64-bit security code
• Low power consumption: Standby and automatic
mode
• Minimum 100,00 PROGRAM/ERASE cycles per
block
• RoHS compliant packages
– 56-pin TSOP (N) 14mm x 20mm
– 64-ball TBGA (ZA) 10mm x 13mm
– 64-ball FBGA (ZS) 11mm x 13mm
• Electronic signature
– Manufacturer code: 0020h
– M29W128GH uniform, last block protected by
V
PP
/WP#: 227Eh + 2221h + 2201h
– M29W128GL uniform, first block protected by
V
PP
/WP#: 227Eh + 2221h + 2200h
• Automotive device grade temperature
– –40°C to +125°C (automotive grade certified)
Note:
1. The 60ns device is available upon customer
request.
128Mb 3V Embedded Parallel NOR Flash
Features
PDF: 09005aef84daa141
m29w_128mb.pdf - Rev. B 5/15 EN
1
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2012 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.
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