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MAC228A6TG 数据手册 - ON Semiconductor（安森美）
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ON Semiconductor（安森美）
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TRIACs
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TO-220-3
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敏感的门双向可控硅硅双向晶闸管 Sensitive Gate Triacs Silicon Bidirectional Thyristors
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MAC228A6TG数据手册
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MAC228A Series
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2
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Characteristic
Symbol Value Unit
Peak Repetitive Off−State Voltage
,
(Note 1)
(T
J
= −40 to 110°C, Sine Wave, 50 to 60 Hz, Gate Open) MAC228A4
MAC228A6
MAC228A8
MAC228A10
V
DRM,
V
RRM
200
400
600
800
V
On-State RMS Current, (T
C
= 80°C) − Full Cycle Sine Wave 50 to 60 Hz I
T(RMS)
8.0 A
Peak Non−Repetitive Surge Current
(One Full Cycle Sine Wave, 60 Hz, T
J
= 110°C)
I
TSM
80 A
Circuit Fusing Considerations, (t = 8.3 ms) I
2
t 26 A
2
s
Peak Gate Current, (t v 2 ms, T
C
= 80°C)
I
GM
"2.0 A
Peak Gate Voltage, (t v 2 ms, T
C
= 80°C)
V
GM
"10 V
Peak Gate Power, (t v 2 ms, T
C
= 80°C)
P
GM
20 W
Average Gate Power, (t v 8.3 ms, T
C
= 80°C) P
G(AV)
0.5 W
Operating Junction Temperature Range T
J
−40 to 110 °C
Storage Temperature Range T
stg
−40 to 150 °C
Mounting Torque − 8.0 in lb
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. V
DRM
and V
RRM
for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such
that the voltage ratings of the devices are exceeded.
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance − Junction−to−Case
R
q
JC
2.0 °C/W
Thermal Resistance − Junction−to−Ambient
R
q
JA
62.5 °C/W
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds T
L
260 °C
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current, (V
D
= Rated V
DRM
, V
RRM
; Gate Open) T
J
= 25°C
T
J
= 110°C
I
DRM
,
I
RRM
−
−
−
−
10
2.0
mA
mA
ON CHARACTERISTICS
Peak On-State Voltage, (I
TM
= "11 A Peak, Pulse Width v 2 ms, Duty Cycle v 2%) V
TM
− − 1.8 V
Gate Trigger Current (Continuous DC), (V
D
= 12 V, R
L
= 100 W)
MT2(+), G(+); MT2(+), G(−); MT2(−), G(−)
MT2(−), G(+)
I
GT
−
−
−
−
5.0
10
mA
Gate Trigger Voltage (Continuous DC), (V
D
= 12 V, R
L
= 100 W)
MT2(+), G(+); MT2(+), G(−); MT2(−), G(−)
MT2(−), G(+)
V
GT
−
−
−
−
2.0
2.5
V
Gate Non−Trigger Voltage (Continuous DC), (V
D
= 12 V, T
C
= 110°C, R
L
= 100 W)
All Four Quadrants
V
GD
0.2 − − V
Holding Current, (V
D
= 12 Vdc, Initiating Current = "200 mA, Gate Open) I
H
− − 15 mA
Gate−Controlled Turn−On Time, (V
D
= Rated V
DRM
, I
TM
= 16 A Peak, I
G
= 30 mA) t
gt
− 1.5 −
ms
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off-State Voltage,
(V
D
= Rated V
DRM
, Exponential Waveform, T
C
= 110°C)
dv/dt − 25 −
V/ms
Critical Rate of Rise of Commutation Voltage, (V
D
= Rated V
DRM
, I
TM
= 11.3 A,
Commutating di/dt = 4.1 A/ms, Gate Unenergized, T
C
= 80°C)
dv/dt(c) − 5.0 −
V/ms
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