Datasheet 搜索 > 肖特基二极管 > ON Semiconductor（安森美） > MBR1H100SFT3G 数据手册 > MBR1H100SFT3G 数据手册 3/5 页
器件3D模型￥ 0.857
MBR1H100SFT3G 数据手册 - ON Semiconductor（安森美）
制造商:
ON Semiconductor（安森美）
分类:
肖特基二极管
封装:
SOD-123-2
描述:
ON SEMICONDUCTOR MBR1H100SFT3G Schottky Rectifier, Single, 100 V, 1 A, SOD-123FL, 2 Pins, 840 V 新
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
页面导航:
导航目录
MBR1H100SFT3G数据手册
Page:
of 5 Go
若手册格式错乱，请下载阅览PDF原文件
MBR1H100SFT3G, NRVB1H100SFT3G
http://onsemi.com
3
TYPICAL CHARACTERISTICS
Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V) V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
0.80.60.40 0.2
0.1
1
10
100
1.61.41.21.00.80.60.4
0.1
1
10
100
Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current
V
R
, REVERSE VOLTAGE (V) V
R
, REVERSE VOLTAGE (V)
908060503020100
0.00001
0.0001
0.001
0.01
0.1
1
10
908060503020100
I
F
, FORWARD CURRENT (A)
I
F
, FORWARD CURRENT (A)
I
R
, REVERSE CURRENT (mA)
I
R
, REVERSE CURRENT (mA)
1.2 1.41.0
150°C
125°C
25°C
40 70 100
150°C
125°C
25°C
40 70 100
Figure 5. Current Derating
T
L
, LEAD TEMPERATURE (°C)
165150145140135
0
0.5
1.0
1.5
2.0
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
dc
Square Wave
155 170160
R
q
JL
= 23°C/W
I
O
, AVERAGE FORWARD CURRENT (A)
10.80.60.40.20
0
0.2
0.4
0.6
0.8
1.0
P
FO
, AVERAGE POWER DISSIPATION (W)
T
J
= 175°C
dc
Square Wave
Figure 6. Forward Power Dissipation
0.20
150°C
125°C
25°C
0.00001
0.0001
0.001
0.01
0.1
1
10
150°C
125°C
25°C
175
1.61.41.2
器件 Datasheet 文档搜索
AiEMA 数据库涵盖高达 72,405,303 个元件的数据手册，每天更新 5,000 多个 PDF 文件
