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MBR3100 数据手册 - Diodes（美台）
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MBR3100数据手册
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PAGE . 1
August 18,2010-REV.01
MBR340 SERIES
FEATURES
• Guard Ring Die Construction for Transient Protection
• Low Power Loss, High Efficiency
• High Surge Capability
• High Current Capability and Low Forward Voltage Drop
• Surge Overload Rating to 80A Peak
• For Use in Low Voltage,High Frequency Inverters ,Free Wheeling ,
and Polarity Protection Applications .
• Lead free in comply with EU RoHS 2011/65/EU directives
MECHANICAL DATA
• Case: DO-201AD Molded plastic
• Terminals: Axial leads, solderable per MIL-STD-750,Method 2026
• Polarity: Color band denotes cathode
• Mounting Position: Any
• Weight: 0.0395 ounce, 1.122 gram
SCHOTTKY BARRIER RECTIFIERS
VOLTAGE
40 to 200 Volts
CURRENT
3.0 Amperes
Notes :
1. Measured at ambient temperature at a distance of 9.5mm from the case
2. Minimum Pad Area
3. Pulse test : 300μs pulse width , 1% duty cycle
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
PARAMETER SYMBOL
MBR340 MBR345 MBR350 MBR360 MBR380 MBR390 MBR3100 MBR3150 MBR3200
UNITS
Maximum Recurrent Peak Reverse Voltage V
RRM
40 45 50 60 80 90 100 150 200 V
Maximum RMS Voltage V
RMS
28 31.5 35 42 56 63 70 105 140 V
Maximum DC Blocking Voltage V
DC
40 45 50 60 80 90 100 150 200 V
Average Rectified Output Current
(See Figure 1)
I
O
3.0 A
Non-Repetitive Peak Forward Surge Current : 8.3ms
single half sine-wave superimposed on rated load
I
FSM
80 A
Forward Voltage at 3.0A (Note 3) V
F
0.70 0.74 0.80 0.9 V
Peak Reverse Current at Rated DC
Blocking Voltage
T
J
=25
O
C
T
J
=100
O
C
I
R
0.05
10
mA
Typical Thermal Resistance (Note 2)
(Note 1)
(Note 1)
R
θJA
R
θJC
R
θJL
50
12
15
O
C / W
Operating Junction and Storage Temperature Range T
J
,T
STG
-55 to +150
-65 to +150
O
C
1.0(25.4)MIN.
0.052(1.3)
0.048(1.2)
0.375(9.5)
0.285(7.2)
1.0(25.4)MIN.
0.210(5.3)
0.188(4.8)
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